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Author: Benduhn, Johannes ×

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    Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices.
    (Weinheim : Wiley-VCH, 2023) Bai, Shaoling; Yang, Lin; Haase, Katherina; Wolansky, Jakob; Zhang, Zongbao; Tseng, Hsin; Talnack, Felix; Kress, Joshua; Andrade, Jonathan Perez; Benduhn, Johannes; Ma, Ji; Feng, Xinliang; Hambsch, Mike; Mannsfeld, Stefan C. B.
    Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆V ) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆V responses is reported. Exposure to low intensity light (25.7 µW cm ) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 10 ) and memory properties including long retention time (>1.5 × 10  s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.
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    Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectors
    ([London] : Nature Publishing Group UK, 2021) Kublitski, Jonas; Fischer, Axel; Xing, Shen; Baisinger, Lukasz; Bittrich, Eva; Spoltore, Donato; Benduhn, Johannes; Vandewal, Koen; Leo, Karl
    Detection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at −10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices.