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Ultra-high sensitive strain sensor based on post-processed optical fiber Bragg grating

2014, Ferreira, M.S., Bierlich, J., Becker, M., Schuster, K., Santos, J.L., Frazão, O.

An ultra-high sensitive strain sensor is proposed. The sensing head, based on the post-processing of a fiber Bragg grating, is used to perform passive and active strain measurements. Both wavelength and full width half maximum dependences with the applied strain are studied for the passive sensor, where maximum sensitivities of 104.1 pm/με and 61.6 pm/με are respectively obtained. When combining the high performance of this sensor with a ring laser cavity configuration, the Bragg grating will act as a filter and high resolution measurements can be performed. With the proposed sensor, a resolution of 700 nε is achieved.

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Diffusion and interface effects during preparation of all-solid microstructured fibers

2014, Kobelke, J., Bierlich, J., Wondraczek, K., Aichele, C., Pan, Z., Unger, S., Schuster, K., Bartelt, H.

All-solid microstructured optical fibers (MOF) allow the realization of very flexible optical waveguide designs. They are prepared by stacking of doped silica rods or canes in complex arrangements. Typical dopants in silica matrices are germanium and phosphorus to increase the refractive index (RI), or boron and fluorine to decrease the RI. However, the direct interface contact of stacking elements often causes interrelated chemical reactions or evaporation during thermal processing. The obtained fiber structures after the final drawing step thus tend to deviate from the targeted structure risking degrading their favored optical functionality. Dopant profiles and design parameters(e.g., the RI homogeneity of the cladding) are controlled by the combination of diffusion and equilibrium conditions of evaporation reactions. We show simulation results of diffusion and thermal dissociation in germanium and fluorine doped silica rod arrangements according to the monitored geometrical disturbances in stretched canes or drawn fibers. The paper indicates geometrical limits of dopant structures in sub-μm-level depending on the dopant concentration and the thermal conditions during the drawing process. The presented results thus enable an optimized planning of the preform parameters avoiding unwanted alterations in dopant concentration profiles or in design parameters encountered during the drawing process.