2014, Hilt, O., Bahat-Treidel, E., Brunner, F., Knauer, A., Zhytnytska, R., Kotara, P., Wuerfl, J.

Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.

2009, Weyers, Markus, Brunner, F., Hübener, N., Knauer, A., Küller, V., Petzke, T., Reentilä, O., Tessaro, T., Wollweber, J., Hartmann, C., Dittmar, A., Nitschke, A., Ziem, M., Lange, P., Jendritzki, U.

[no abstract available]

2010, Richter, E., Weyers, Markus, Gründer, M., Brunner, F., Hennig, Ch., Wernicke, T, Einfeldt, S., Hartmann, M., Neumann, C.

[no abstract available]

2013, Brunner, F.

[no abstract available]