Search Results
Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
2011, Barbagini, Francesca, Bengoechea-Encabo, Ana, Albert, Steven, Martinez, Javier, Sanchez García, Miguel Angel, Trampert, Achim, Calleja, Enrique
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
2019, Nicolai, Lars, Gačević, Žarko, Calleja, Enrique, Trampert, Achim
The three-dimensional structure of GaN/(In,Ga)N core-shell nanowires with multi-faceted pencil-shaped apex is analyzed by electron tomography using high-angle annular dark-field mode in a scanning transmission electron microscope. Selective area growth on GaN-on-sapphire templates using a patterned mask is performed by molecular beam epitaxy to obtain ordered arrays of uniform nanowires. Our results of the tomographic reconstruction allow the detailed determination of the complex morphology of the inner (In,Ga)N multi-faceted shell structure and its deviation from the perfect hexagonal symmetry. The tomogram unambiguously identifies a dot-in-a-wire configuration at the nanowire apex including the exact shape and size, as well as the spatial distribution of its chemical composition. © 2019, The Author(s).