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Author: Débieux, S. × Subject: Timing detectors ×

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Now showing 1 - 3 of 3
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    Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project
    (London : Inst. of Physics, 2019) Paolozzi, L.; Bandi, Y.; Cardarelli, R.; Débieux, S.; Favre, Y.; Ferrère, D.; Forshaw, D.; Hayakawa, D.; Iacobucci, G.; Kaynak, M.; Miucci, A.; Nessi, M.; Ripiccini, E.; Rücker, H.; Valerio, P.; Weber, M.
    The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 03 × 1 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 µm and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9% and a time resolution down to 110 ps. © 2019 CERN.
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    Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project
    (London : Inst. of Physics, 2018) Paolozzi, L.; Bandi, Y.; Benoit, M.; Cardarelli, R.; Débieux, S.; Forshaw, D.; Hayakawa, D.; Iacobucci, G.; Kaynak, M.; Miucci, A.; Nessi, M.; Ratib, O.; Ripiccini, E.; Rücker, H.; Valerio, P.; Weber, M.
    The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e− RMS and a pulse rise time of less than 2 ns , in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps .
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    Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
    (London : Inst. of Physics, 2022) Paolozzi, L.; Munker, M.; Cardella, R.; Milanesio, M.; Gurimskaya, Y.; Martinelli, F.; Picardi, A.; Rücker, H.; Trusch, A.; Valerio, P.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C.A.; Ferrere, D.; Gonzalez-Sevilla, S.; Kotitsa, R.; Magliocca, C.; Moretti, T.; Nessi, M.; Pizarro Medina, A.; Sabater Iglesias, J.; Saidi, J.; Vicente Barreto Pinto, M.; Zambito, S.; Iacobucci, G.
    The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP)drift(NP)gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 μm pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a 55Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the ^55Fe source limits the effective gain.