2019, Vempati, S., Deinert, J.-C., Gierster, L., Bogner, L., Richter, C., Mutz, N., Blumstengel, S., Zykov, A., Kowarik, S., Garmshausen, Y., Hildebrandt, J., Hecht, S., Stahler, J.

The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(1 0 -1 0). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level E F . Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above E F , which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation, this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces. © 2019 IOP Publishing Ltd.

2021, Teichert, J., Arnold, A., Ciovati, G., Deinert, J.-C., Evtushenko, P., Justus, M., Klopf, J.M., Kneisel, P., Kovalev, S., Kuntzsch, M., Lehnert, U., Lu, P., Ma, S., Murcek, P., Michel, P., Ryzhov, A., Schaber, J., Schneider, C., Schurig, R., Steinbrück, R., Vennekate, H., Will, I., Xiang, R.

At the electron linac for beams with high brilliance and low emittance (ELBE) center for high-power radiation sources, the second version of a superconducting radio-frequency (SRF) photoinjector has been put into operation and has been routinely applied for user operation at the ELBE electron accelerator. SRF guns are suitable for generating a continuous wave electron beam with high average currents and high beam brightness. The SRF gun at ELBE has the goal to generate short electron pulses with bunch charges of 200–300 pC at typical repetition rates of 100 kHz for the production of superradiant, coherent terahertz radiation. The SRF gun includes a 3.5-cell, 1.3-GHz niobium cavity and a superconducting solenoid. A support system with liquid nitrogen (LN2) cooling allows the operation of normal-conducting, high quantum efficiency photocathodes. We present the design and performance of the SRF gun as well as beam measurement results of the operation with Mg photocathodes at an acceleration gradient of 8  MV/m (4 MeV kinetic energy). In the last section, we discuss the SRF gun application for production of coherent terahertz radiation at the ELBE facility.