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Author: Dellith, A. ×

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    Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching
    (New York, NY [u.a.] : Hindawi Publ. Corp., 2018) Jia, G.; Plentz, J.; Gawlik, A.; Azar, A.S.; Stokkan, G.; Syvertsen, M.; Carvalho, P.A.; Dellith, J.; Dellith, A.; Andrä, G.; Ulyashin, A.
    In this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses 180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments.
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    Influence of process parameters on the incorporation of phosphorus into silica soot material during MCVD process
    (Washington, DC : OSA, 2020) Lindner, F.; Kriltz, A.; Scheffel, A.; Dellith, A.; Dellith, J.; Wondraczek, K.; Bartelt, H.
    The incorporation of phosphorus into silica soot material strongly changes during the multistep preparation process of the MCVD technology in combination with solution doping for Al and rare earths. We report on the influence of various process parameters on the phosphorus concentration, the bond types of phosphorus atoms and the relative density of the soot material. By optimization of the process the phosphorus concentration of the presintered soot could be increased by around 10% in comparison to the conventional treatment. The understanding of the interdependencies allows an improvement of the preparation process of phosphorus co-doped RE doped silica laser fibers with MCVD technology.