2019, Doan, Duy Hai, Fischer, Axel, Fuhrmann, Jürgen, Glitzky, Annegret, Liero, Matthias

We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.

2019, Fuhrmann, Jürgen, Doan, Duy Hai, Glitzky, Annegret, Liero, Matthias, Nika, Grigor

We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.