Search Results

Now showing 1 - 2 of 2
  • Item
    Symmetry‐Induced Selective Excitation of Topological States in Su–Schrieffer–Heeger Waveguide Arrays
    (Weinheim : Wiley-VCH, 2023) Tang, Min; Wang, Jiawei; Valligatla, Sreeramulu; Saggau, Christian N.; Dong, Haiyun; Saei Ghareh Naz, Ehsan; Klembt, Sebastian; Lee, Ching Hua; Thomale, Ronny; van den Brink, Jeroen; Fulga, Ion Cosma; Schmidt, Oliver G.; Ma, Libo
    The investigation of topological state transition in carefully designed photonic lattices is of high interest for fundamental research, as well as for applied studies such as manipulating light flow in on-chip photonic systems. Herein, the topological phase transition between symmetric topological zero modes (TZM) and antisymmetric TZMs in Su–Schrieffer–Heeger mirror symmetric waveguides is reported. The transition of TZMs is realized by adjusting the coupling ratio between neighboring waveguide pairs, which is enabled by selective modulation of the refractive index in the waveguide gaps. Bidirectional topological transitions between symmetric and antisymmetric TZMs can be achieved with proposed switching strategy. Selective excitation of topological edge mode is demonstrated owing to the symmetry characteristics of the TZMs. The flexible manipulation of topological states is promising for on-chip light flow control and may spark further investigations on symmetric/antisymmetric TZM transitions in other photonic topological frameworks.
  • Item
    Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction
    (Basel : MDPI, 2023) Andleeb, Shaista; Wang, Xiaoyu; Dong, Haiyun; Valligatla, Sreeramulu; Saggau, Christian Niclaas; Ma, Libo; Schmidt, Oliver G.; Zhu, Feng
    Over the past years, molybdenum disulfide (MoS2) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS2 is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS2. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS2 by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS2/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS2 by rapidly segregating photo-generated holes, which move away from the traps of MoS2 toward the VOPc molecules. The MoS2/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS2-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed.