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Author: Dong, Haiyun × End date: 2024 × Start date: 2020 × DDC: 570 × Has files: Yes × WGL Institute: IFWD ×

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    Imperceptible Supercapacitors with High Area-Specific Capacitance
    (Weinheim : Wiley-VCH, 2021) Ge, Jin; Zhu, Minshen; Eisner, Eric; Yin, Yin; Dong, Haiyun; Karnaushenko, Dmitriy D.; Karnaushenko, Daniil; Zhu, Feng; Ma, Libo; Schmidt, Oliver G.
    Imperceptible electronics will make next-generation healthcare and biomedical systems thinner, lighter, and more flexible. While other components are thoroughly investigated, imperceptible energy storage devices lag behind because the decrease of thickness impairs the area-specific energy density. Imperceptible supercapacitors with high area-specific capacitance based on reduced graphene oxide/polyaniline (RGO/PANI) composite electrodes and polyvinyl alcohol (PVA)/H2SO4 gel electrolyte are reported. Two strategies to realize a supercapacitor with a total device thickness of 5 µm—including substrate, electrode, and electrolyte—and an area-specific capacitance of 36 mF cm−2 simultaneously are implemented. First, the void volume of the RGO/PANI electrodes through mechanical compression is reduced, which decreases the thickness by 83% while retaining 89% of the capacitance. Second, the PVA-to-H2SO4 mass ratio is decreased to 1:4.5, which improves the ion conductivity by 5000% compared to the commonly used PVA/H2SO4 gel. Both advantages enable a 2 µm-thick gel electrolyte for planar interdigital supercapacitors. The impressive electromechanical stability of the imperceptible supercapacitors by wrinkling the substrate to produce folds with radii of 6 µm or less is demonstrated. The supercapacitors will be meaningful energy storage modules for future self-powered imperceptible electronics.
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    Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction
    (Basel : MDPI, 2023) Andleeb, Shaista; Wang, Xiaoyu; Dong, Haiyun; Valligatla, Sreeramulu; Saggau, Christian Niclaas; Ma, Libo; Schmidt, Oliver G.; Zhu, Feng
    Over the past years, molybdenum disulfide (MoS2) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS2 is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS2. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS2 by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS2/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS2 by rapidly segregating photo-generated holes, which move away from the traps of MoS2 toward the VOPc molecules. The MoS2/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS2-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed.