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Author: Dreyer, Wolfgang × Subject: crystal growth ×

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Now showing 1 - 2 of 2
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    Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012) Dreyer, Wolfgang; Druet, Pierre-Étienne; Klein, Olaf; Sprekels, Jürgen
    This paper deals with the mathematical modeling and simulation of crystal growth processes by the so-called Czochralski method and related methods, which are important industrial processes to grow large bulk single crystals of semiconductor materials such as, e.,g., gallium arsenide (GaAs) or silicon (Si) from the melt. In particular, we investigate a recently developed technology in which traveling magnetic fields are applied in order to control the behavior of the turbulent melt flow. Since numerous different physical effects like electromagnetic fields, turbulent melt flows, high temperatures, heat transfer via radiation, etc., play an important role in the process, the corresponding mathematical model leads to an extremely difficult system of initial-boundary value problems for nonlinearly coupled partial differential equations ...
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    On unwanted nucleation phenomena at the wall of a VGF chamber
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Dreyer, Wolfgang; Duderstadt, Frank; Eichler, Stefan; Naldzhieva, Margarita
    This is preliminary study on a phenomenon that happens during crystal growth of GaAs in a vertical gradient freeze (VGF) device. Here unwanted polycrystals nucleate at the chamber wall and move into the interior of the crystal. This happens within an undercooled region in the vicinity of the triple point, where the liquid-solid interface meets the chamber wall. The size and shape of that region is modelled by the Gibbs-Thomson law, which will be rederived in this paper. Hereafter we identify the crucial parameter, whose proper adjustment may minimize the undercooled region.