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Author: Du, Nan × DDC: 530 ×

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    Low-power emerging memristive designs towards secure hardware systems for applications in internet of things
    (Amsterdam : Elsevier, 2021) Du, Nan; Schmidt, Heidemarie; Polian, Ilia
    Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and in-memory computing (IMC), but there is a rising interest in using memristive technologies for security applications in the era of internet of things (IoT). In this review article, for achieving secure hardware systems in IoT, low-power design techniques based on emerging memristive technology for hardware security primitives/systems are presented. By reviewing the state-of-the-art in three highlighted memristive application areas, i.e. memristive non-volatile memory, memristive reconfigurable logic computing and memristive artificial intelligent computing, their application-level impacts on the novel implementations of secret key generation, crypto functions and machine learning attacks are explored, respectively. For the low-power security applications in IoT, it is essential to understand how to best realize cryptographic circuitry using memristive circuitries, and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security. This review article aims to help researchers to explore security solutions, to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.
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    Charged domains in ferroelectric, polycrystalline yttrium manganite thin films resolved with scanning electron microscopy
    (Bristol : IOP Publ., 2020) Rayapati, Venkata Rao; Bürger, Danilo; Du, Nan; Kowol, Cornelia; Blaschke, Daniel; Stöcker, Hartmut; Matthes, Patrick; Patra, Rajkumar; Skorupa, Ilona; Schulz, Stefan E.; Schmidt, Heidemarie
    We have investigated ferroelectric charged domains in polycrystalline hexagonal yttrium manganite thin films (Y1Mn1O3, Y0.95Mn1.05O3, Y1Mn0.99Ti0.01O3, and Y0.94Mn1.05Ti0.01O3) by scanning electron microscopy (SEM) in secondary electron emission mode with a small acceleration voltage. Using SEM at an acceleration voltage of 1.0 kV otherwise homogenous surface charging effects are reduced, polarization charges can be observed and polarization directions (±Pz) of the ferroelectric domains in the polycrystalline thin films can be identified. Thin films of different chemical composition have been deposited by pulsed laser deposition on Pt/SiO2/Si structures under otherwise same growth conditions. Using SEM it has been shown that different charged domain density networks are existing in polycrystalline yttrium manganite thin films. © 2020 IOP Publishing Ltd.