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Author: Eissa, Mohamed Hussein × End date: 2021 × Start date: 2021 × WGL Institute: IHP ×

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    240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology
    (New York, NY : IEEE, 2021) Wang, Defu; Eissa, Mohamed Hussein; Schmalz, Klaus; Kampfe, Thomas; Kissinger, Dietmar
    This article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
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    Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz
    (New York, NY : IEEE, 2021) Schmalz, Klaus; Rothbart, Nick; Gluck, Alexandra; Eissa, Mohamed Hussein; Mausolf, Thomas; Turkmen, Esref; Yilmaz, Selahattin Berk; Hubers, Heinz-Wilhelm
    This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP's 0.13 μm SiGe BiCMOS technology. The TX and RX use two integrated local oscillators for 222 - 256 GHz and 250 - 270 GHz, which are switched for dual-band operation. Due to its directivity of about 27 dBi, the single integrated bowtie-antenna with silicon lens enables an EIRP of about 25 dBm for the TX, and therefore a considerably higher EIRP for the 2-band TX compared to previously reported systems. The double sideband noise temperature of the RX is 20,000 K (18.5 dB noise figure) as measured by the Y-factor method. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the gas spectroscopy system with TX- and RX-modules.