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Author: Fedorov, A. × End date: 2024 × Start date: 2020 × Type: Text × Subject: Topology ×

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Now showing 1 - 3 of 3
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    Extremely large magnetoresistance from electron-hole compensation in the nodal-loop semimetal ZrP2
    (Woodbury, NY : Inst., 2021) Bannies, J.; Razzoli, E.; Michiardi, M.; Kung, H.-H.; Elfimov, I.S.; Yao, M.; Fedorov, A.; Fink, J.; Jozwiak, C.; Bostwick, A.; Rotenberg, E.; Damascelli, A.; Felser, C.
    Several early transition metal dipnictides (TMDPs) have been found to host topological semimetal states and exhibit large magnetoresistance (MR). In this paper, we use angle-resolved photoemission spectroscopy (ARPES) and magnetotransport to study the electronic properties of a TMDP ZrP2. We find that ZrP2 exhibits an extremely large and unsaturated MR of up to 40 000% at 2 K, which originates from an almost perfect electron-hole (e-h) compensation. Our band structure calculations further show that ZrP2 hosts a topological nodal loop in proximity to the Fermi level. Based on the ARPES measurements, we confirm the results of our calculations and determine the surface band structure. This paper establishes ZrP2 as a platform to investigate near-perfect e-h compensation and its interplay with topological band structures.
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    Experimental Observation of Dirac Nodal Links in Centrosymmetric Semimetal TiB2
    (College Park, MD : American Physical Society, 2018) Liu, Z.; Lou, R.; Guo, P.; Wang, Q.; Sun, S.; Li, C.; Thirupathaiah, S.; Fedorov, A.; Shen, D.; Liu, K.; Lei, H.; Wang, S.
    The topological nodal-line semimetal state, serving as a fertile ground for various topological quantum phases, where a topological insulator, Dirac semimetal, or Weyl semimetal can be realized when the certain protecting symmetry is broken, has only been experimentally studied in very few materials. In contrast to discrete nodes, nodal lines with rich topological configurations can lead to more unusual transport phenomena. Utilizing angle-resolved photoemission spectroscopy and first-principles calculations, here, we provide compelling evidence of nodal-line fermions in centrosymmetric semimetal TiB2 with a negligible spin-orbit coupling effect. With the band crossings just below the Fermi energy, two groups of Dirac nodal rings are clearly observed without any interference from other bands, one surrounding the Brillouin zone (BZ) corner in the horizontal mirror plane σh and the other surrounding the BZ center in the vertical mirror plane σv. The linear dispersions forming Dirac nodal rings are as wide as 2 eV. We further observe that the two groups of nodal rings link together along the Γ-K direction, composing a nodal-link configuration. The simple electronic structure with Dirac nodal links mainly constituting the Fermi surfaces suggests TiB2 as a remarkable platform for studying and applying the novel physical properties related to nodal-line fermions.
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    Possible experimental realization of a basic Z 2 topological semimetal in GaGeTe
    (College Park, MD : American Institute of Physics, 2019) Haubold, E.; Fedorov, A.; Pielnhofer, F.; Rusinov, I.P.; Menshchikova, T.V.; Duppel, V.; Friedrich, D.; Weihrich, R.; Pfitzner, A.; Zeugner, A.; Isaeva, A.; Thirupathaiah, S.; Kushnirenko, Y.; Rienks, E.; Kim, T.; Chulkov, E.V.; Büchner, B.; Borisenko, S.
    We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron and holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential.