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    Detection of antiskyrmions by topological Hall effect in Heusler compounds
    (Woodbury, NY : Inst., 2020) Kumar, Vivek; Kumar, Nitesh; Reehuis, Manfred; Gayles, Jacob; Sukhanov, A.S.; Hoser, Andreas; Damay, Françoise; Shekhar, Chandra; Adler, Peter; Felser, Claudia
    Heusler compounds having D2d crystal symmetry gained much attention recently due to the stabilization of a vortexlike spin texture called antiskyrmions in thin lamellae of Mn1.4Pt0.9Pd0.1Sn as reported in the work of Nayak et al. [Nature (London) 548, 561 (2017)10.1038/nature23466]. Here we show that bulk Mn1.4Pt0.9Pd0.1Sn undergoes a spin-reorientation transition from a collinear ferromagnetic to a noncollinear configuration of Mn moments below 135 K, which is accompanied by the emergence of a topological Hall effect. We tune the topological Hall effect in Pd and Rh substituted Mn1.4PtSn Heusler compounds by changing the intrinsic magnetic properties and spin textures. A unique feature of the present system is the observation of a zero-field topological Hall resistivity with a sign change which indicates the robust formation of antiskyrmions. © 2020 authors. Published by the American Physical Society.
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    Topological Hall effect in thin films of Mn1.5PtSn
    (College Park, MD : APS, 2019) Swekis, Peter; Markou, Anastasios; Kriegner, Dominik; Gayles, Jacob; Schlitz, Richard; Schnelle, Walter; Goennenwein, Sebastian T.B.; Felser, Claudia
    Spin chirality in metallic materials with noncoplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H≈4T below the spin reorientation transition temperature, Ts=185 K. We find that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn2-xPtSn by extracting the effect for multiple stoichiometries (x=0.5,0.25,0.1) and film thicknesses (t=104,52,35 nm) with maximum topological Hall resistivities between 0.76 and 1.55μΩcm at 150 K. © 2019 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
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    Simultaneous magnetic field and field gradient mapping of hexagonal MnNiGa by quantitative magnetic force microscopy
    (London : Springer Nature, 2023) Freitag, Norbert H.; Reiche, Christopher F.; Neu, Volker; Devi, Parul; Burkhardt, Ulrich; Felser, Claudia; Wolf, Daniel; Lubk, Axel; Büchner, Bernd; Mühl, Thomas
    Magnetic force microscopy (MFM) is a scanning microscopy technique that is commonly employed to probe the sample’s magnetostatic stray fields via their interaction with a magnetic probe tip. In this work, a quantitative, single-pass MFM technique is presented that maps one magnetic stray-field component and its spatial derivative at the same time. This technique uses a special cantilever design and a special high-aspect-ratio magnetic interaction tip that approximates a monopole-like moment. Experimental details, such as the control scheme, the sensor design, which enables simultaneous force and force gradient measurements, as well as the potential and limits of the monopole description of the tip moment are thoroughly discussed. To demonstrate the merit of this technique for studying complex magnetic samples it is applied to the examination of polycrystalline MnNiGa bulk samples. In these experiments, the focus lies on mapping and analyzing the stray-field distribution of individual bubble-like magnetization patterns in a centrosymmetric [001] MnNiGa phase. The experimental data is compared to calculated and simulated stray-field distributions of 3D magnetization textures, and, furthermore, bubble dimensions including diameters are evaluated. The results indicate that the magnetic bubbles have a significant spatial extent in depth and a buried bubble top base.
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    Spin Nernst effect in a p-band semimetal InBi
    (Bristol : IOP Publishing, 2020) Zhang, Yang; Xu, Qiunan; Koepernik, Klaus; Fu, Chenguang; Gooth, Johannes; van den Brink, Jeroen; Felser, Claudia; Sun, Yan
    Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin Nernst effect (SNE), the thermoelectrical counterpart of the SHE, has attracted much interest. Empirically strong SHEs and SNEs are associated with d-band compounds, such as transition metals and their alloys—the largest spin Hall conductivity (SHC) in a p-band material is $\sim 450\left(\hslash /e\right){\left({\Omega}\enspace \mathrm{c}\mathrm{m}\right)}^{-1}$ for a Bi–Sb alloy, which is only about a fifth of platinum. This raises the question whether either the SHE and SNE are naturally suppressed in p-bands compounds, or favourable p-band systems were just not identified yet. Here we consider the p-band semimetal InBi, and predict it has a record SHC ${\sigma }_{xy}^{z}\approx 1100\enspace \left(\hslash /e\right){\left({\Omega}\enspace \mathrm{c}\mathrm{m}\right)}^{-1}$ which is due to the presence of nodal lines in its band structure. Also the spin-Nernst conductivity ${\alpha }_{zx}^{y}\approx 1.2\enspace \left(\hslash /e\right)\left(A/m\cdot K\right)$ is very large, but our analysis shows its origin is different as the maximum appears in a different tensor element compared to that in SHC. This insight gained on InBi provides guiding principles to obtain a strong SHE and SNE in p-band materials and establishes a more comprehensive understanding of the relationship between the SHE and SNE.
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    Effect of uniaxial stress on the electronic band structure of NbP
    (Woodbury, NY : Inst., 2020) Schindler, Clemens; Noky, Jonathan; Schmidt, Marcus; Felser, Claudia; Wosnitza, Jochen; Gooth, Johannes
    The Weyl semimetal NbP exhibits a very small Fermi surface consisting of two electron and two hole pockets, whose fourfold degeneracy in k space is tied to the rotational symmetry of the underlying tetragonal crystal lattice. By applying uniaxial stress, the crystal symmetry can be reduced, which successively leads to a degeneracy lifting of the Fermi-surface pockets. This is reflected by a splitting of the Shubnikov-de Haas frequencies when the magnetic field is aligned along the c axis of the tetragonal lattice. In this study, we present the measurement of Shubnikov-de Haas oscillations of single-crystalline NbP samples under uniaxial tension, combined with state-of-the-art calculations of the electronic band structure. Our results show qualitative agreement between calculated and experimentally determined Shubnikov-de Haas frequencies, demonstrating the robustness of the band-structure calculations upon introducing strain. Furthermore, we predict a significant shift of the Weyl points with increasing uniaxial tension, allowing for an effective tuning to the Fermi level at only 0.8% of strain along the a axis. © 2020 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "https://creativecommons.org/licenses/by/4.0/"Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Open access publication funded by the Max Planck Society.