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- ItemTime-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Wenzel, Hans; Radziunas, Mindaugas; Fuhrmann, Jürgen; Klehr, Andreas; Bandelow, Uwe; Knigge, AndreaWe propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches.
- ItemA numerical analysis focused comparison of several finite volume schemes for an unipolar degenerated drift-diffusion model(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Cancès, Clément; Chainais-Hillairet, Claire; Fuhrmann, Jürgen; Gaudeul, BenoîtIn this paper, we consider an unipolar degenerated drift-diffusion system where the relation between the concentration of the charged species c and the chemical potential h is h(c) = log c/1-c. We design four different finite volume schemes based on four different formulations of the fluxes. We provide a stability analysis and existence results for the four schemes. The convergence proof with respect to the discretization parameters is established for two of them. Numerical experiments illustrate the behaviour of the different schemes.
- ItemModeling polycrystalline electrode-electrolyte interfaces: The differential capacitance(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Fuhrmann, Jürgen; Landstorfer, Manuel; Müller, RüdigerWe present and analyze a model for polycrystalline electrode surfaces based on an improved continuum model that takes finite ion size and solvation into account. The numerical simulation of finite size facet patterns allows to study two limiting cases: While for facet size diameter $d^facet to 0$ we get the typical capacitance of a spatially homogeneous but possible amorphous or liquid surface, in the limit $L^Debye << d^facet$ , an ensemble of non-interacting single crystal surfaces is approached. Already for moderate size of the facet diameters, the capacitance is remarkably well approximated by the classical approach of adding the single crystal capacities of the contributing facets weighted by their respective surface fraction. As a consequence, the potential of zero charge is not necessarily attained at a local minimum of capacitance, but might be located at a local capacitance maximum instead. Moreover, the results show that surface roughness can be accurately taken into account by multiplication of the ideally flat polycrystalline surface capacitance with a single factor. In particular, we find that the influence of the actual geometry of the facet pattern in negligible and our theory opens the way to a stochastic description of complex real polycrystal surfaces.
- ItemDrift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
- ItemUnipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Fuhrmann, Jürgen; Doan, Duy Hai; Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.
- ItemA continuum model for yttria-stabilised zirconia incorporating triple phase boundary, lattice structure and immobile oxide ions(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Vágner, Petr; Guhlke, Clemens; Miloš, Vojtěch; Müller, Rüdiger; Fuhrmann, JürgenA continuum model for yttria-stabilised zirconia (YSZ) in the framework of non-equilibrium thermodynamics is developed. Particular attention is given to i) modeling of the YSZ-metal-gas triple phase boundary, ii) incorporation of the lattice structure and immobile oxide ions within the free energy model and iii) surface reactions. A finite volume discretization method based on modified Scharfetter-Gummel fluxes is derived in order to perform numerical simulations. The model is used to study the impact of yttria and immobile oxide ions on the structure of the charged boundary layer and the double layer capacitance. Cyclic voltammograms of an air-half cell are simulated to study the effect of parameter variations on surface reactions, adsorption and anion diffusion.