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Author: Fuhrmann, Jürgen × DDC: 510 ×

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Now showing 1 - 10 of 33
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    Entropy and convergence analysis for two finite volume schemes for a Nernst–Planck–Poisson system with ion volume constraints
    (Berlin ; Heidelberg : Springer, 2022) Gaudeul, Benoît; Fuhrmann, Jürgen
    In this paper, we consider a drift-diffusion system with cross-coupling through the chemical potentials comprising a model for the motion of finite size ions in liquid electrolytes. The drift term is due to the self-consistent electric field maintained by the ions and described by a Poisson equation. We design two finite volume schemes based on different formulations of the fluxes. We also provide a stability analysis of these schemes and an existence result for the corresponding discrete solutions. A convergence proof is proposed for non-degenerate solutions. Numerical experiments show the behavior of these schemes.
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    Modeling polycrystalline electrode-electrolyte interfaces: The differential capacitance
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Fuhrmann, Jürgen; Landstorfer, Manuel; Müller, Rüdiger
    We present and analyze a model for polycrystalline electrode surfaces based on an improved continuum model that takes finite ion size and solvation into account. The numerical simulation of finite size facet patterns allows to study two limiting cases: While for facet size diameter $d^facet to 0$ we get the typical capacitance of a spatially homogeneous but possible amorphous or liquid surface, in the limit $L^Debye << d^facet$ , an ensemble of non-interacting single crystal surfaces is approached. Already for moderate size of the facet diameters, the capacitance is remarkably well approximated by the classical approach of adding the single crystal capacities of the contributing facets weighted by their respective surface fraction. As a consequence, the potential of zero charge is not necessarily attained at a local minimum of capacitance, but might be located at a local capacitance maximum instead. Moreover, the results show that surface roughness can be accurately taken into account by multiplication of the ideally flat polycrystalline surface capacitance with a single factor. In particular, we find that the influence of the actual geometry of the facet pattern in negligible and our theory opens the way to a stochastic description of complex real polycrystal surfaces.
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    An assessment of discretizations for convection-dominated convection-diffusion equations
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Augustin, Matthias; Caiazzo, Alfonso; Fiebach, André; Fuhrmann, Jürgen; John, Volker; Linke, Alexander; Umla, Rudolf
    The performance of several numerical schemes for discretizing convection-dominated convection-diffusion equations will be investigated with respect to accuracy and efficiency. Accuracy is considered in measures which are of interest in applications. The study includes an exponentially fitted finite volume scheme, the Streamline-Upwind Petrov--Galerkin (SUPG) finite element method, a spurious oscillations at layers diminishing (SOLD) finite element method, a finite element method with continuous interior penalty (CIP) stabilization, a discontinuous Galerkin (DG) finite element method, and a total variation diminishing finite element method (FEMTVD). A detailed assessment of the schemes based on the Hemker example will be presented.
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    Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Abdel, Dilara; Farrell, Patricio; Fuhrmann, Jürgen
    The van Roosbroeck system models current flows in (non-)degenerate semiconductor devices. Focusing on the stationary model, we compare the excess chemical potential discretization scheme, a flux approximation which is based on a modification of the drift term in the current densities, with another state-of-the-art Scharfetter-Gummel scheme, namely the diffusion-enhanced scheme. Physically, the diffusion-enhanced scheme can be interpreted as a flux approximation which modifies the thermal voltage. As a reference solution we consider an implicitly defined integral flux, using Blakemore statistics. The integral flux refers to the exact solution of a local two point boundary value problem for the continuous current density and can be interpreted as a generalized Scharfetter-Gummel scheme. All numerical discretization schemes can be used within a Voronoi finite volume method to simulate charge transport in (non-)degenerate semiconductor devices. The investigation includes the analysis of Taylor expansions, a derivation of error estimates and a visualization of errors in local flux approximations to extend previous discussions. Additionally, drift-diffusion simulations of a p-i-n device are performed.
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    MAC schemes on triangular Delaunay meshes
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Eymard, Robert; Fuhrmann, Jürgen; Linke, Alexander
    We study two classical generalized MAC schemes on unstructured triangular Delaunay meshes for the incompressible Stokes and Navier-Stokes equations and prove their convergence for the first time. These generalizations use the duality between Voronoi and triangles of Delaunay meshes, in order to construct two staggered discretization schemes. Both schemes are especially interesting, since compatible finite volume discretizations for coupled convection-diffusion equations can be constructed which preserve discrete maximum principles. In the first scheme, called tangential velocity scheme, the pressures are defined at the vertices of the mesh, and the discrete velocities are tangential to the edges of the triangles. In the second scheme, called normal velocity scheme, the pressures are defined in the triangles, and the discrete velocities are normal to the edges of the triangles. For both schemes, we prove the convergence in $L^2$ for the velocities and the discrete rotations of the velocities for the Stokes and the Navier-Stokes problem. Further, for the normal velocity scheme, we also prove the strong convergence of the pressure in $L^2$. Linear and nonlinear numerical examples illustrate the theoretical predictions.
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    Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, Matthias
    We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
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    On thermodynamic consistency of a Scharfetter-Gummel scheme based on a modified thermal voltage for drift-diffusion equations with diffusion enhancement
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Koprucki, Thomas; Rotundo, Nella; Farrell, Patricio; Doan, Duy Hai; Fuhrmann, Jürgen
    Driven by applications like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with arbitrary statistical distribution functions. This requires numerical schemes that preserve qualitative properties of the solutions, such as positivity of densities, dissipativity and consistency with thermodynamic equilibrium. An extension of the Scharfetter-Gummel scheme guaranteeing consistency with thermodynamic equilibrium is studied. It is derived by replacing the thermal voltage with an averaged diffusion enhancement for which we provide a new explicit formula. This approach avoids solving the costly local nonlinear equations defining the current for generalized Scharfetter-Gummel schemes.
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    Convergence of a finite volume scheme to the eigenvalues of a Schrödinger operator
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2007) Koprucki, Thomas; Eymard, Robert; Fuhrmann, Jürgen
    We consider the approximation of a Schrödinger eigenvalue problem arising from the modeling of semiconductor nanostructures by a finite volume method in a bounded domain $OmegasubsetR^d$. In order to prove its convergence, a framework for finite dimensional approximations to inner products in the Sobolev space $H^1_0(Omega)$ is introduced which allows to apply well known results from spectral approximation theory. This approach is used to obtain convergence results for a classical finite volume scheme for isotropic problems based on two point fluxes, and for a finite volume scheme for anisotropic problems based on the consistent reconstruction of nodal fluxes. In both cases, for two- and three-dimensional domains we are able to prove first order convergence of the eigenvalues if the corresponding eigenfunctions belong to $H^2(Omega)$. The construction of admissible meshes for finite volume schemes using the Delaunay-Voronoï method is discussed. As numerical examples, a number of one-, two- and three-dimensional problems relevant to the modeling of semiconductor nanostructures is presented. In order to obtain analytical eigenvalues for these problems, a matching approach is used. To these eigenvalues, and to recently published highly accurate eigenvalues for the Laplacian in the L-shape domain, the results of the implemented numerical method are compared. In general, for piecewise $H^2$ regular eigenfunctions, second order convergence is observed experimentally.
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    Inverse modeling of thin layer flow cells for detection of solubility, transport and reaction coefficients from experimental data
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Fuhrmann, Jürgen; Linke, Alexander; Merdon, Christian; Neumann, Felix; Streckenbach, Timo; Baltruschat, Helmut; Khodayari, Mehdi
    Thin layer flow cells are used in electrochemical research as experimental devices which allow to perform investigations of electrocatalytic surface reactions under controlled conditions using reasonably small electrolyte volumes. The paper introduces a general approach to simulate the complete cell using accurate numerical simulation of the coupled flow, transport and reaction processes in a flow cell. The approach is based on a mass conservative coupling of a divergence-free finite element method for fluid flow and a stable finite volume method for mass transport. It allows to perform stable and efficient forward simulations that comply with the physical bounds namely mass conservation and maximum principles for the involved species. In this context, several recent approaches to obtain divergence-free velocities from finite element simulations are discussed. In order to perform parameter identification, the forward simulation method is coupled to standard optimization tools. After an assessment of the inverse modeling approach using known real-istic data, first results of the identification of solubility and transport data for O2 dissolved in organic electrolytes are presented. A plausibility study for a more complex situation with surface reactions concludes the paper and shows possible extensions of the scope of the presented numerical tools.
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    3D electrothermal simulations of organic LEDs showing negative differential resistance
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, Sebastian
    Organic semiconductor devices show a pronounced interplay between temperature-activated conductivity and self-heating which in particular causes inhomogeneities in the brightness of large-area OLEDs at high power. We consider a 3D thermistor model based on partial differential equations for the electrothermal behavior of organic devices and introduce an extension to multiple layers with nonlinear conductivity laws, which also take the diode-like behavior in recombination zones into account. We present a numerical simulation study for a red OLED using a finite-volume approximation of this model. The appearance of S-shaped current-voltage characteristics with regions of negative differential resistance in a measured device can be quantitatively reproduced. Furthermore, this simulation study reveals a propagation of spatial zones of negative differential resistance in the electron and hole transport layers toward the contact.