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- ItemThe 2020 UV emitter roadmap(Bristol : IOP Publ., 2020) Amano, Hiroshi; Collazo, Ramón; De Santi, Carlo; Einfeldt, Sven; Funato, Mitsuru; Glaab, Johannes; Hagedorn, Sylvia; Hirano, Akira; Hirayama, Hideki; Ishii, Ryota; Kashima, Yukio; Kawakami, Yoichi; Kirste, Ronny; Kneissl, Michael; Martin, Robert; Mehnke, Frank; Meneghini, Matteo; Ougazzaden, Abdallah; Parbrook, Peter J.; Rajan, Siddharth; Reddy, Pramod; Römer, Friedhard; Friedhard, Jan; Sarkar, Biplab; Scholz, Ferdinand; Schowalter, Leo J; Shields, Philip; Sitar, Zlatko; Sulmoni, Luca; Wang, Tao; Wernicke, Tim; Weyers, Markus; Witzigmann, Bernd; Wu, Yuh-Renn; Wunderer, Thomas; Zhang, YueweiSolid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm - due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments. © 2020 IOP Publishing Ltd.
- ItemSubsequent treatment of leafy vegetables with low doses of UVB-radiation does not provoke cytotoxicity, genotoxicity, or oxidative stress in a human liver cell model(Amsterdam [u.a.] : Elsevier, 2021) Wiesner-Reinhold, Melanie; Dutra Gomes, João Victor; Herz, Corinna; Tran, Hoai Thi Thu; Baldermann, Susanne; Neugart, Susanne; Filler, Thomas; Glaab, Johannes; Einfeldt, Sven; Schreiner, Monika; Lamy, EvelynUltraviolet B (UVB) radiation in low but ecological-relevant doses acts as a regulator in the plant's secondary metabolism. This study investigates the effect of UVB radiation from light-emitting diodes (LEDs) [peak wavelength of (290 ± 2) nm] on the biosynthesis of health-promoting secondary plant metabolites (carotenoids, phenolic compounds, and glucosinolates) of green and red leafy vegetables of Lactuca sativa, Brassica campestris, and Brassica juncea followed by evaluation of potential adverse effects in a human liver cell model. UVB radiation led to a significant increase in individual secondary plant metabolites, especially of phenolic compounds and glucosinolates, e.g. alkenyl glucosinolate content. Kaempferol und quercetin glycoside concentrations were also significantly increased compared to untreated plants. The plant extracts from Lactuca sativa, Brassica campestris, and Brassica juncea were used to assess cytotoxicity (WST-1 assay and trypan blue staining), genotoxicity (Comet assay), and production of reactive oxygen species (EPR) using metabolically competent human-derived HepG2 liver cells. No adverse effects in terms of cytotoxicity, genotoxicity, or oxidative stress were detected in an extract concentration ranging from 3.125 to 100 μg ml−1. Notably, only at very high concentrations were marginal cytostatic effects observed in extracts from UVB-treated as well as untreated plants. In conclusion, the application of UVB radiation from LEDs changes structure-specific health-promoting secondary plant metabolites without damaging the plants. The treatment did not result in adverse effects at the human cell level. Based on these findings, UVB LEDs are a future alternative, promising light source to replace currently commonly used high-pressure sodium lamps in greenhouses.
- ItemSkin tolerant inactivation of multiresistant pathogens using far-UVC LEDs([London] : Macmillan Publishers Limited, part of Springer Nature, 2021) Glaab, Johannes; Lobo-Ploch, Neysha; Cho, Hyun Kyong; Filler, Thomas; Gundlach, Heiko; Guttmann, Martin; Hagedorn, Sylvia; Lohan, Silke B.; Mehnke, Frank; Schleusener, Johannes; Sicher, Claudia; Sulmoni, Luca; Wernicke, Tim; Wittenbecher, Lucas; Woggon, Ulrike; Zwicker, Paula; Kramer, Axel; Meinke, Martina C.; Kneissl, Michael; Weyers, Markus; Winterwerber, Ulrike; Einfeldt, SvenMultiresistant pathogens such as methicillin-resistant Staphylococcus aureus (MRSA) cause serious postoperative infections. A skin tolerant far-UVC (< 240 nm) irradiation system for their inactivation is presented here. It uses UVC LEDs in combination with a spectral filter and provides a peak wavelength of 233 nm, with a full width at half maximum of 12 nm, and an irradiance of 44 µW/cm2. MRSA bacteria in different concentrations on blood agar plates were inactivated with irradiation doses in the range of 15–40 mJ/cm2. Porcine skin irradiated with a dose of 40 mJ/cm2 at 233 nm showed only 3.7% CPD and 2.3% 6-4PP DNA damage. Corresponding irradiation at 254 nm caused 11–14 times higher damage. Thus, the skin damage caused by the disinfectant doses is so small that it can be expected to be compensated by the skin's natural repair mechanisms. LED-based far-UVC lamps could therefore soon be used in everyday clinical practice to eradicate multiresistant pathogens directly on humans.
- ItemComparison of Ultraviolet B Light‐Emitting Diodes with Single or Triple Quantum Wells(Weinheim : Wiley-VCH, 2021) Kolbe, Tim; Knauer, Arne; Ruschel, Jan; Rass, Jens; Kyong Cho, Hyun; Hagedorn, Sylvia; Glaab, Johannes; Lobo Ploch, Neysha; Einfeldt, Sven; Weyers, MarkusLight-emitting diodes (LEDs) with an emission wavelength of 310 nm containing either a single or a triple quantum well are compared regarding their efficiency and long-term stability. In addition, the influence of the thickness of the lower quantum well barrier and the quantum well thickness in single quantum well (SQW) LEDs is investigated. Electroluminescence measurements show a 28% higher initial output power for the SQW LEDs compared with the triple quantum well (TQW) LEDs because of larger spatial overlap of the carriers in the SQW as revealed by electro-optical simulations of the LED heterostructures. However, TQW LEDs show a higher output power than SQW LEDs after 1 h operation under harsh conditions. For SQW LEDs, it is found that for a thicker lower quantum well barrier (65 nm instead of 25 nm) the initial output power decreases by ≈15%. A thicker SQW (3 nm instead of 1.6 nm) reduces the initial output power by even 45% but increases the lifetime by a factor of 6 which is attributed to reduced Auger recombination from an enhanced spatial separation of electrons and holes in the quantum wells due to the quantum-confined Stark effect.