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- ItemDrift-diffusion modeling, analysis and simulation of organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Doan, Duy-Hai; Glitzky, Annegret; Liero, MatthiasWe discuss drift-diffusion models for charge-carrier transport in organic semiconductor devices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The former leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlinear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauders fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
- Item3D electrothermal simulations of organic LEDs showing negative differential resistance(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, SebastianOrganic semiconductor devices show a pronounced interplay between temperature-activated conductivity and self-heating which in particular causes inhomogeneities in the brightness of large-area OLEDs at high power. We consider a 3D thermistor model based on partial differential equations for the electrothermal behavior of organic devices and introduce an extension to multiple layers with nonlinear conductivity laws, which also take the diode-like behavior in recombination zones into account. We present a numerical simulation study for a red OLED using a finite-volume approximation of this model. The appearance of S-shaped current-voltage characteristics with regions of negative differential resistance in a measured device can be quantitatively reproduced. Furthermore, this simulation study reveals a propagation of spatial zones of negative differential resistance in the electron and hole transport layers toward the contact.
- Itemp-Laplace thermistor modeling of electrothermal feedback in organic semiconductors(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Liero, Matthias; Koprucki, Thomas; Fischer, Axel; Scholz, Reinhard; Glitzky, AnnegretIn large-area Organic Light-Emitting Diodes (OLEDs) spatially inhomogeneous luminance at high power due to inhomogeneous current flow and electrothermal feedback can be observed. To describe these self-heating effects in organic semiconductors we present a stationary thermistor model based on the heat equation for the temperature coupled to a p-Laplace-type equation for the electrostatic potential with mixed boundary conditions. The p-Laplacian describes the non-Ohmic electrical behavior of the organic material. Moreover, an Arrhenius-like temperature dependency of the electrical conductivity is considered. We introduce a finite-volume scheme for the system and discuss its relation to recent network models for OLEDs. In two spatial dimensions we derive a priori estimates for the temperature and the electrostatic potential and prove the existence of a weak solution by Schauder's fixed point theorem.
- ItemSystems describing electrothermal effects with p(x)-Laplacian like structure for discontinuous variable exponents(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Bulíc̆ek, Miroslav; Glitzky, Annegret; Liero, MatthiasWe consider a coupled system of two elliptic PDEs, where the elliptic term in the first equation shares the properties of the p(x)-Laplacian with discontinuous exponent, while in the second equation we have to deal with an a priori L1 term on the right hand side. Such a system of equations is suitable for the description of various electrothermal effects, in particular those, where the non-Ohmic behavior can change dramatically with respect to the spatial variable. We prove the existence of a weak solution under very weak assumptions on the data and also under general structural assumptions on the constitutive equations of the model. The main difficulty consists in the fact that we have to overcome simultaneously two obstacles
- ItemThermistor systems of p(x)-Laplace-type with discontinuous exponents via entropy solutions(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Bulicek, Miroslav; Glitzky, Annegret; Liero, MatthiasWe show the existence of solutions to a system of elliptic PDEs, that was recently introduced to describe the electrothermal behavior of organic semiconductor devices. Here, two difficulties appear: (i) the elliptic term in the current-flow equation is of p(x)-Laplacian-type with discontinuous exponent p, which limits the use of standard methods, and (ii) in the heat equation, we have to deal with an a priori L1 term on the right hand side describing the Joule heating in the device. We prove the existence of a weak solution under very weak assumptions on the data. Our existence proof is based on Schauder's fixed point theorem and the concept of entropy solutions for the heat equation. Here, the crucial point is the continuous dependence of the entropy solutions on the data of the problem.
- ItemHybrid finite-volume/finite-element schemes for p(x)-Laplace thermistor models(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe introduce an empirical PDE model for the electrothermal description of organic semiconductor devices by means of current and heat flow. The current flow equation is of p(x)-Laplace type, where the piecewise constant exponent p(x) takes the non-Ohmic behavior of the organic layers into account. Moreover, the electrical conductivity contains an Arrhenius-type temperature law. We present a hybrid finite-volume/finite-element discretization scheme for the coupled system, discuss a favorite discretization of the p(x)-Laplacian at hetero interfaces, and explain how path following methods are applied to simulate S-shaped current-voltage relations resulting from the interplay of self-heating and heat flow.
- ItemAnalysis of p(x)-Laplace thermistor models describing the electrothermal behavior of organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Glitzky, Annegret; Liero, MatthiasWe study a stationary thermistor model describing the electrothermal behavior of organic semiconductor devices featuring non-Ohmic current-voltage laws and selfheating effects. The coupled system consists of the current-flow equation for the electrostatic potential and the heat equation with Joule heating term as source. The self-heating in the device is modeled by an Arrhenius-like temperature dependency of the electrical conductivity. Moreover, the non-Ohmic electrical behavior is modeled by a power law such that the electrical conductivity depends nonlinearly on the electric field. Notably, we allow for functional substructures with different power laws, which gives rise to a p(x)-Laplace-type problem with piecewise constant exponent. We prove the existence and boundedness of solutions in the two-dimensional case. The crucial point is to establish the higher integrability of the gradient of the electrostatic potential to tackle the Joule heating term. The proof of the improved regularity is based on Caccioppoli-type estimates, Poincaré inequalities, and a Gehring-type Lemma for the p(x)-Laplacian. Finally, Schauders fixed-point theorem is used to show the existence of solutions.