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- ItemHybrid finite-volume/finite-element schemes for p(x)-Laplace thermistor models(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe introduce an empirical PDE model for the electrothermal description of organic semiconductor devices by means of current and heat flow. The current flow equation is of p(x)-Laplace type, where the piecewise constant exponent p(x) takes the non-Ohmic behavior of the organic layers into account. Moreover, the electrical conductivity contains an Arrhenius-type temperature law. We present a hybrid finite-volume/finite-element discretization scheme for the coupled system, discuss a favorite discretization of the p(x)-Laplacian at hetero interfaces, and explain how path following methods are applied to simulate S-shaped current-voltage relations resulting from the interplay of self-heating and heat flow.
- ItemAn existence result for a class of electrothermal drift-diffusion models with Gauss--Fermi statistics for organic semiconductors(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Glitzky, Annegret; Liero, Matthias; Nika, GrigorThis work is concerned with the analysis of a drift-diffusion model for the electrothermal behavior of organic semiconductor devices. A "generalized Van Roosbroeck'' system coupled to the heat equation is employed, where the former consists of continuity equations for electrons and holes and a Poisson equation for the electrostatic potential, and the latter features source terms containing Joule heat contributions and recombination heat. Special features of organic semiconductors like Gauss--Fermi statistics and mobilities functions depending on the electric field strength are taken into account. We prove the existence of solutions for the stationary problem by an iteration scheme and Schauder's fixed point theorem. The underlying solution concept is related to weak solutions of the Van Roosbroeck system and entropy solutions of the heat equation. Additionally, for data compatible with thermodynamic equilibrium, the uniqueness of the solution is verified. It was recently shown that self-heating significantly influences the electronic properties of organic semiconductor devices. Therefore, modeling the coupled electric and thermal responses of organic semiconductors is essential for predicting the effects of temperature on the overall behavior of the device. This work puts the electrothermal drift-diffusion model for organic semiconductors on a sound analytical basis.
- ItemA coarse-grained electrothermal model for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2021) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion based electrothermal models with thermistor type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss--Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
- ItemAn effective bulk-surface thermistor model for large-area organic light-emitting diodes(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Glitzky, Annegret; Liero, Matthias; Nika, GrigorThe existence of a weak solution for an effective system of partial differential equations describing the electrothermal behavior of large-area organic light-emitting diodes (OLEDs) is proved. The effective system consists of the heat equation in the three-dimensional bulk glass substrate and two semi-linear equations for the current flow through the electrodes coupled to algebraic equations for the continuity of the electrical fluxes through the organic layers. The electrical problem is formulated on the (curvilinear) surface of the glass substrate where the OLED is mounted. The source terms in the heat equation are due to Joule heating and are hence concentrated on the part of the boundary where the current-flow equation is posed. The existence of weak solutions to the effective system is proved via Schauder's fixed-point theorem. Moreover, since the heat sources are a priori only in $L^1$, the concept of entropy solutions is used.
- ItemAnalysis of a hybrid model for the electrothermal behavior of semiconductor heterostructures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe prove existence of a weak solution for a hybrid model for the electro-thermal behavior of semiconductor heterostructures. This hybrid model combines an electro-thermal model based on drift-diffusion with thermistor type models in different subregions of the semiconductor heterostructure. The proof uses a regularization method and Schauder's fixed point theorem. For boundary data compatible with thermodynamic equilibrium we verify, additionally, uniqueness. Moreover, we derive bounds and higher integrability properties for the electrostatic potential and the quasi Fermi potentials as well as the temperature.
- ItemDrift-diffusion modeling, analysis and simulation of organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Doan, Duy-Hai; Glitzky, Annegret; Liero, MatthiasWe discuss drift-diffusion models for charge-carrier transport in organic semiconductor devices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The former leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlinear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauders fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
- ItemDrift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
- ItemUnipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Fuhrmann, Jürgen; Doan, Duy Hai; Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.
- ItemDimension reduction of thermistor models for large-area organic light-emitting diodes(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Glitzky, Annegret; Liero, Matthias; Nika, GrigorAn effective system of partial differential equations describing the heat and current flow through a thin organic light-emitting diode (OLED) mounted on a glass substrate is rigorously derived from a recently introduced fully three-dimensional φ(x)-Laplace thermistor model. The OLED consists of several thin layers that scale differently with respect to the multiscale parameter ε > 0 which is the ratio between the total thickness and the lateral extent of the OLED. Starting point of the derivation is a rescaled formulation of the current-flow equation in the OLED for the driving potential and the heat equation in OLED and glass substrate with Joule heat term concentrated in the OLED. Assuming physically motivated scalings in the electrical flux functions, uniform a priori bounds are derived for the solutions of the three-dimensional system which facilitates the extraction of converging subsequences with limits that are identified as solutions of a dimension reduced system. In the latter, the effective current-flow equation is given by two semilinear equations in the two-dimensional cross-sections of the electrodes and algebraic equations for the continuity of the electrical fluxes through the organic layers. The effective heat equation is formulated only in the glass substrate with Joule heat term on the part of the boundary where the OLED is mounted.
- Item3D electrothermal simulations of organic LEDs showing negative differential resistance(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, SebastianOrganic semiconductor devices show a pronounced interplay between temperature-activated conductivity and self-heating which in particular causes inhomogeneities in the brightness of large-area OLEDs at high power. We consider a 3D thermistor model based on partial differential equations for the electrothermal behavior of organic devices and introduce an extension to multiple layers with nonlinear conductivity laws, which also take the diode-like behavior in recombination zones into account. We present a numerical simulation study for a red OLED using a finite-volume approximation of this model. The appearance of S-shaped current-voltage characteristics with regions of negative differential resistance in a measured device can be quantitatively reproduced. Furthermore, this simulation study reveals a propagation of spatial zones of negative differential resistance in the electron and hole transport layers toward the contact.