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- ItemExperimental proof of Joule heating-induced switched-back regions in OLEDs(London : Nature Publishing Group, 2020) Kirch, Anton; Fische, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, SebastianOrganic light-emitting diodes (OLEDs) have become a major pixel technology in the display sector, with products spanning the entire range of current panel sizes. The ability to freely scale the active area to large and random surfaces paired with flexible substrates provides additional application scenarios for OLEDs in the general lighting, automotive, and signage sectors. These applications require higher brightness and, thus, current density operation compared to the specifications needed for general displays. As extended transparent electrodes pose a significant ohmic resistance, OLEDs suffering from Joule self-heating exhibit spatial inhomogeneities in electrical potential, current density, and hence luminance. In this article, we provide experimental proof of the theoretical prediction that OLEDs will display regions of decreasing luminance with increasing driving current. With a two-dimensional OLED model, we can conclude that these regions are switched back locally in voltage as well as current due to insufficient lateral thermal coupling. Experimentally, we demonstrate this effect in lab-scale devices and derive that it becomes more severe with increasing pixel size, which implies its significance for large-area, high-brightness use cases of OLEDs. Equally, these non-linear switching effects cannot be ignored with respect to the long-term operation and stability of OLEDs; in particular, they might be important for the understanding of sudden-death scenarios. © 2020, The Author(s).
- ItemA coarse‐grained electrothermal model for organic semiconductor devices(Chichester, West Sussex : Wiley, 2022) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion- based electrothermal models with thermistor-type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
- ItemOperation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode(Melville, NY : American Inst. of Physics, 2016) Kaschura, Felix; Fischer, Axel; Klinger, Markus P.; Doan, Duy Hai; Koprucki, Thomas; Glitzky, Annegret; Kasemann, Daniel; Widmer, Johannes; Leo, KarlThe organic permeable base transistor is a vertical transistor architecture that enables high performance while maintaining a simple low-resolution fabrication. It has been argued that the charge transport through the nano-sized openings of the central base electrode limits the performance. Here, we demonstrate by using 3D drift-diffusion simulations that this is not the case in the relevant operation range. At low current densities, the applied base potential controls the number of charges that can pass through an opening and the opening is the current limiting factor. However, at higher current densities, charges accumulate within the openings and in front of the base insulation, allowing for an efficient lateral transport of charges towards the next opening. The on-state in the current-voltage characteristics reaches the maximum possible current given by space charge limited current transport through the intrinsic semiconductor layers. Thus, even a small effective area of the openings can drive huge current densities, and further device optimization has to focus on reducing the intrinsic layer thickness to a minimum.
- ItemDrift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices(Dordrecht : Springer Science + Business Media B.V., 2020) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift–diffusion model for organic semiconductor devices with Gauss–Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter–Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current–voltage curves with regions of negative differential resistance, which were only recently observed experimentally. © 2020, The Author(s).
- ItemIntroducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device(Weinheim : Wiley-VCH, 2020) Zheng, Yichu; Fischer, Axel; Sawatzki, Michael; Doan, Duy Hai; Liero, Matthias; Glitzky, Annegret; Reineke, Sebastian; Mannsfeld, Stefan C.B.In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode-based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write-read-erase-read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady-state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemElectrothermal Tristability Causes Sudden Burn-In Phenomena in Organic LEDs(Weinheim : Wiley-VCH, 2021) Kirch, Anton; Fischer, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, SebastianOrganic light-emitting diodes (OLEDs) have been established as a mature display pixel technology. While introducing the same technology in a large-area form factor to general lighting and signage applications, some key questions remain unanswered. Under high-brightness conditions, OLED panels were reported to exhibit nonlinear electrothermal behavior causing lateral brightness inhomogeneities and even regions of switched-back luminance. Also, the physical understanding of sudden device failure and burn-ins is still rudimentary. A safe and stable operation of lighting tiles, therefore, requires an in-depth understanding of these physical phenomena. Here, it is shown that the electrothermal treatment of thin-film devices allows grasping the underlying physics. Configurations of OLEDs with different lateral dimensions are studied as a role model and it is reported that devices exceeding a certain panel size develop three stable, self heating-induced operating branches. Switching between them causes the sudden formation of dark spots in devices without any preexisting inhomogeneities. A current-stabilized operation mode is commonly used in the lighting industry, as it ensures degradation-induced voltage adjustments. Here, it is demonstrated that a tristable operation always leads to destructive switching, independent of applying constant currents or voltages. With this new understanding of the effects at high operation brightness, it will be possible to adjust driving schemes accordingly, design more resilient system integrations, and develop additional failure mitigation strategies. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
- ItemA gradient structure for systems coupling reaction-diffusion effects in bulk and interfaces(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Glitzky, Annegret; Mielke, AlexanderWe derive gradient-flow formulations for systems describing drift-diffusion processes of a finite number of species which undergo mass-action type reversible reactions. Our investigations cover heterostructures, where material parameter may depend in a nonsmooth way on the space variable. The main results concern a gradient flow formulation for electro-reaction-diffusion systems with active interfaces permitting drift-diffusion processes and reactions of species living on the interface and transfer mechanisms allowing bulk species to jump into an interface or to pass through interfaces. The gradient flows are formulated in terms of two functionals: the free energy and the dissipation potential. Both functionals consist of a bulk and an interface integral. The interface integrals determine the interface dynamics as well as the self-consistent coupling to the model in the bulk. The advantage of the gradient structure is that it automatically generates thermodynamically consistent models.
- ItemReaktions-Diffusionsgleichungen in Heterostrukturen mit Anwendungen in der Halbleitertechnologie : Schlußbericht zu einem Vorhaben im BMBF-Förderprogramm Anwendungsorientierte Verbundvorhaben auf dem Gebiet der Mathematik(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 1997) Hünlich, Rolf; Glitzky, Annegret; Röpke, WilfriedIm Vorhaben wurden Beitraege zur Modellierung und Simulation relevanter Teilprozesse bei der Herstellung von Halbleiterbauelementen der Nanoelektronik geleistet. Behandelt wurden vorrangig Fragestellungen,die beim Verbundpartner, dem Institut fueur Halbleiterphysik Frankfurt (Oder), zur Entwicklung von SiGe--Heterojunction--Bipolartransistoren von Bedeutung waren. Schwerpunkte bildeten Fragen zur Diffusion von Fremdatomen in verspannten SiGe--Schichten sowie zu Feldeffekten bei der Diffusion elektrisch geladener Teilchen im Hochkonzentrationsfall. Gegenstand der analytischen und numerischen Untersuchungen waren verschiedene Klassen von Elektro-Reaktions-Diffusionsgleichungen in Heterostrukturen, die relevante Aufgaben aus der Halbleitertechnologie auf verschiedenen Niveaus modellieren. Hier wurden neue Aussagen zur globalen Existenz, Einzigkeit und zum asymptotischen Verhalten der Loesungen erhalten.Weiterhin wurden Diskretisierungsschemata, die Konvergenz von Naeherungsverfahren sowie die Reduktion der Modellgleichungen fuer singulaer gestoerte Faelle diskutiert.
- ItemElectro-reaction-diffusion systems in heterostructures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2000) Glitzky, Annegret; Hünlich, RolfThe paper is devoted to the mathematical investigation of a general class of electro-reaction-diffusion systems with nonsmooth data which arises in applications to semiconductor technology. Besides of a basic problem, a reduced problem is considered which is obtained if the kinetics of the free carriers is fast. For two dimensional domains we prove a global existence and uniqueness result. In addition, asymptotic properties of solutions are studied. Basic ideas are energy estimates, Moser iteration, regularization techniques and an existence result for electro-diffusion systems with weakly nonlinear volume and boundary source terms which is proved in the paper, too. The relationship between the property that the energy functional decays exponentially in time to its equilibrium value and the existence of global positive lower bounds for the densities of the species is investigated. We illustrate relations between the model and its reduced version in general and for concrete examples. Finally, we discuss the special features of heterostructures for simplified model problems.
- ItemHybrid finite-volume/finite-element schemes for p(x)-Laplace thermistor models(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe introduce an empirical PDE model for the electrothermal description of organic semiconductor devices by means of current and heat flow. The current flow equation is of p(x)-Laplace type, where the piecewise constant exponent p(x) takes the non-Ohmic behavior of the organic layers into account. Moreover, the electrical conductivity contains an Arrhenius-type temperature law. We present a hybrid finite-volume/finite-element discretization scheme for the coupled system, discuss a favorite discretization of the p(x)-Laplacian at hetero interfaces, and explain how path following methods are applied to simulate S-shaped current-voltage relations resulting from the interplay of self-heating and heat flow.