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Author: Gonzalez-Sevilla, S. × Has files: Yes ×

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    Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
    (London : Inst. of Physics, 2020) Paolozzi, L.; Cardarelli, R.; Débieux, S.; Favre, Y.; Ferrère, D.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kaynak, M.; Martinelli, F.; Nessi, M.; Rücker, H.; Sanna, I.; Sultan, D.M.S.; Valerio, P.; Zaffaroni, E.
    SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without internal gain. The development of such sensors requires the identification and control of the main factors that may degrade the timing performance as well as the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a 90Sr source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics shows a time resolution of 140 ps at an amplifier current of 7 µA and 45 ps at a power consumption of 150 µA. The resolution on the measurement of the signal time-over-threshold, which is used to correct for time walk, is the main factor affecting the timing performance of this prototype. c 2020 CERN. Published by IOP Publishing Ltd on behalf of Sissa Medialab.
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    Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype
    (London : Inst. of Physics, 2022) Iacobucci, G.; Zambito, S.; Milanesio, M.; Moretti, T.; Saidi, J.; Paolozzi, L.; Munker, M.; Cardella, R.; Martinelli, F.; Picardi, A.; Rücker, H.; Trusch, A.; Valerio, P.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C.A.; Ferrere, D.; Gonzalez-Sevilla, S.; Gurimskaya, Y.; Kotitsa, R.; Magliocca, C.; Nessi, M.; Pizarro-Medina, A.; Sabater Iglesias, J.; Vicente Barreto Pinto, M.
    The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.
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    Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
    (London : Inst. of Physics, 2022) Paolozzi, L.; Munker, M.; Cardella, R.; Milanesio, M.; Gurimskaya, Y.; Martinelli, F.; Picardi, A.; Rücker, H.; Trusch, A.; Valerio, P.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C.A.; Ferrere, D.; Gonzalez-Sevilla, S.; Kotitsa, R.; Magliocca, C.; Moretti, T.; Nessi, M.; Pizarro Medina, A.; Sabater Iglesias, J.; Saidi, J.; Vicente Barreto Pinto, M.; Zambito, S.; Iacobucci, G.
    The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP)drift(NP)gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 μm pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a 55Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the ^55Fe source limits the effective gain.