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Author: Grüneis, A. ×

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    Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions
    (London : Nature Publishing Group, 2021) Senkovskiy, B.; Nenashev, A.; Alavi, S.; Falke, Y.; Hell, M.; Bampoulis, P.; Rybkovskiy, D.; Usachov, D.; Fedorov, A.; Chernov, A.; Gebhard, F.; Meerholz, K.; Hertel, D.; Arita, M.; Okuda, T.; Miyamoto, K.; Shimada, K.; Fischer, F.; Michely, T.; Baranovskii, S.; Lindfors, K.; Szkopek, T.; Grüneis, A.
    Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.
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    Effect of nematic ordering on electronic structure of FeSe
    (London : Nature Publishing Group, 2016) Fedorov, A.; Yaresko, A.; Kim, T.K.; Kushnirenko, Y.; Haubold, E.; Wolf, T.; Hoesch, M.; Grüneis, A.; Büchner, B.; Borisenko, S.V.
    Electronically driven nematic order is often considered as an essential ingredient of high-temperature superconductivity. Its elusive nature in iron-based superconductors resulted in a controversy not only as regards its origin but also as to the degree of its influence on the electronic structure even in the simplest representative material FeSe. Here we utilized angle-resolved photoemission spectroscopy and density functional theory calculations to study the influence of the nematic order on the electronic structure of FeSe and determine its exact energy and momentum scales. Our results strongly suggest that the nematicity in FeSe is electronically driven, we resolve the recent controversy and provide the necessary quantitative experimental basis for a successful theory of superconductivity in iron-based materials which takes into account both, spin-orbit interaction and electronic nematicity.
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    Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation
    (London : Nature Publishing Group, 2015) Verbitskiy, N.I.; Fedorov, A.V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D.Yu.; Vyalikh, D.V.; Yashina, L.V.; Eliseev, A.A.; Pichler, T.; Grüneis, A.
    The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.
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    Controlled assembly of graphene-capped nickel, cobalt and iron silicides
    (London : Nature Publishing Group, 2013) Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L.V.; Generalov, A.V.; Borygina, K.; Verbitskiy, N.I.; Grüneis, A.; Vyalikh, D.V.
    In-situ dendrite/metallic glass matrix composites (MGMCs) with a composition of Ti46Zr20V12Cu5Be17 exhibit ultimate tensile strength of 1510 MPa and fracture strain of about 7.6%. A tensile deformation model is established, based on the five-stage classification: (1) elastic-elastic, (2) elastic-plastic, (3) plastic-plastic (yield platform), (4) plastic-plastic (work hardening), and (5) plastic-plastic (softening) stages, analogous to the tensile behavior of common carbon steels. The constitutive relations strongly elucidate the tensile deformation mechanism. In parallel, the simulation results by a finite-element method (FEM) are in good agreement with the experimental findings and theoretical calculations. The present study gives a mathematical model to clarify the work-hardening behavior of dendrites and softening of the amorphous matrix. Furthermore, the model can be employed to simulate the tensile behavior of in-situ dendrite/MGMCs.