Search Results
Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains
2006, Glitzky, Annegret, Hünlich, Rolf
We discuss a stationary energy model from semiconductor modelling. We accept the more realistic assumption that the continuity equations for electrons and holes have to be considered only in a subdomain $Omega_0$ of the domain of definition $Omega$ of the energy balance equation and of the Poisson equation. Here $Omega_0$ corresponds to the region of semiconducting material, $OmegasetminusOmega_0$ represents passive layers. Metals serving as contacts are modelled by Dirichlet boundary conditions. We prove a local existence and uniqueness result for the two-dimensional stationary energy model. For this purpose we derive a $W^1,p$-regularity result for solutions of systems of elliptic equations with different regions of definition and use the Implicit Function Theorem.
Electro-reaction-diffusion systems in heterostructures
2000, Glitzky, Annegret, Hünlich, Rolf
The paper is devoted to the mathematical investigation of a general class of electro-reaction-diffusion systems with nonsmooth data which arises in applications to semiconductor technology. Besides of a basic problem, a reduced problem is considered which is obtained if the kinetics of the free carriers is fast. For two dimensional domains we prove a global existence and uniqueness result. In addition, asymptotic properties of solutions are studied. Basic ideas are energy estimates, Moser iteration, regularization techniques and an existence result for electro-diffusion systems with weakly nonlinear volume and boundary source terms which is proved in the paper, too. The relationship between the property that the energy functional decays exponentially in time to its equilibrium value and the existence of global positive lower bounds for the densities of the species is investigated. We illustrate relations between the model and its reduced version in general and for concrete examples. Finally, we discuss the special features of heterostructures for simplified model problems.
Resolvent estimates in W-1,p related to strongly coupled linear parabolic systems with coupled nonsmooth capacities
2006, Glitzky, Annegret, Hünlich, Rolf
We investigate linear parabolic systems with coupled nonsmooth capacities and mixed boundary conditions. We prove generalized resolvent estimates in W-1,p spaces. The method is an appropriate modification of a technique introduced by Agmon to obtain Lp estimates for resolvents of elliptic differential operators in the case of smooth boundary conditions. Moreover, we establish an existence and uniqueness result.
Reaktions-Diffusionsgleichungen in Heterostrukturen mit Anwendungen in der Halbleitertechnologie : Schlußbericht zu einem Vorhaben im BMBF-Förderprogramm Anwendungsorientierte Verbundvorhaben auf dem Gebiet der Mathematik
1997, Hünlich, Rolf, Glitzky, Annegret, Röpke, Wilfried
Im Vorhaben wurden Beitraege zur Modellierung und Simulation relevanter Teilprozesse bei der Herstellung von Halbleiterbauelementen der Nanoelektronik geleistet. Behandelt wurden vorrangig Fragestellungen,die beim Verbundpartner, dem Institut fueur Halbleiterphysik Frankfurt (Oder), zur Entwicklung von SiGe--Heterojunction--Bipolartransistoren von Bedeutung waren. Schwerpunkte bildeten Fragen zur Diffusion von Fremdatomen in verspannten SiGe--Schichten sowie zu Feldeffekten bei der Diffusion elektrisch geladener Teilchen im Hochkonzentrationsfall. Gegenstand der analytischen und numerischen Untersuchungen waren verschiedene Klassen von Elektro-Reaktions-Diffusionsgleichungen in Heterostrukturen, die relevante Aufgaben aus der Halbleitertechnologie auf verschiedenen Niveaus modellieren. Hier wurden neue Aussagen zur globalen Existenz, Einzigkeit und zum asymptotischen Verhalten der Loesungen erhalten.Weiterhin wurden Diskretisierungsschemata, die Konvergenz von Naeherungsverfahren sowie die Reduktion der Modellgleichungen fuer singulaer gestoerte Faelle diskutiert.