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Now showing 1 - 3 of 3
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    Bistability and hysteresis in an optically injected two-section semiconductor laser
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Pimenov, Alexander; Viktorov, Evgeniy A.; Hegarty, Stephen P.; Habruseva, Tatiana; Huyet, Guillaume; Rachinskii, Dmitrii; Vladimirov, Andrei G.
    The effect of coherent single frequency injection on two-section semiconductor lasers is studied numerically using a model based on a set of delay differential equations. The existence of bistability between different CW and non-stationary regimes of operation is demonstrated in the case of sufficiently large linewidth enhancement factors.
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    Timing jitter in passively mode-locked semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Pimenov, Alexander; Rachinskii, Dmitrii; Habruseva, Tatiana; Hegarty, Stephen P.; Guillaume, Huyet; Vladimirov, Andrei G.
    We study the effect of noise on the dynamics of passively mode-locked semiconductor lasers both experimentally and theoretically. A method combining analytical and numerical approaches for estimation of pulse timing jitter is proposed. We investigate how the presence of dynamical features such as wavelength bistability affects timing jitter.
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    Semiconductor mode-locked lasers with coherent dual mode optical injection: Simulations, analysis and experiment
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Arkhipov, Rostislav M.; Habruseva, Tatiana; Pimenov, Alexander; Radziunas, Mindaugas; Huyet, Guillaume; Vladimirov, Andrei G.
    Using a delay differential equations model we study the dynamics of a passively modelocked semiconductor laser with dual frequency coherent optical injection. The locking regions where the laser pulse repetition rate is synchronized to the separation of the two injected frequencies were calculated numerically and measured experimentally. Asymptotic analysis performed in the limit of the small injection field amplitude revealed the dependence of the locking regions on the model parameters, such as optical bandwidth, absorber recovery time and linear losses.