2009, Fuchs, G., Drechsler, S.-L., Kozlova, N., Bartkowiak, M., Hamann-Borrero, J.E., Behr, G., Nenkov, K., Klauss, H.-H., Maeter, H., Amato, A., Luetkens, H., Kwadrin, A., Khasanov, R., Freudenberger, J., Köhler, A., Knupfer, M., Arushanov, E., Rosner, H., Büchner, B., Schultz, L.

We report upper critical field Bc2(T) data for LaO0.9F0.1FeAs1- δ in a wide temperature and field range up to 60 T. The large slope of Bc2≈- 5.4 to -6.6 T K-1 near an improved Tc≈28.5 K of the in-plane Bc2(T) contrasts with a flattening starting near 23 K above 30 T we regard as the onset of Pauli-limited behaviour (PLB) with Bc2(0)≈63–68 T. We interpret a similar hitherto unexplained flattening of the Bc2(T) curves reported for at least three other disordered closely related systems, Co-doped BaFe2As2, (Ba,K) Fe2As2 and NdO0.7F0.3FeAs (all single crystals), for applied fields H∥(a,b), also as a manifestation of PLB. Their Maki parameters have been estimated by analysing their Bc2(T) data within the Werthamer–Helfand–Hohenberg approach. The pronounced PLB of (Ba, K)Fe2As2 single crystals obtained from an Sn flux is attributed also to a significant As deficiency detected by wavelength dispersive x-ray spectroscopy as reported by Ni et al (2008 Phys. Rev. B 78 014507). Consequences of our results are discussed in terms of disorder effects within conventional superconductivity (CSC) and unconventional superconductivity (USC). USC scenarios with nodes on individual Fermi surface sheets (FSS), e.g. p- and d-wave SC, can be discarded for our samples. The increase of dBc2/dT|Tc by sizeable disorder provides evidence for an important intraband (intra-FSS) contribution to the orbital upper critical field. We suggest that it can be ascribed either to an impurity-driven transition from s± USC to CSC of an extended s++-wave state or to a stabilized s±-state provided As-vacancies cause predominantly strong intraband scattering in the unitary limit. We compare our results with Bc2 data from the literature, which often show no PLB for fields below 60–70 T probed so far. A novel disorder-related scenario of a complex interplay of SC with two different competing magnetic instabilities is suggested.

2015, Zwiebler, M., Hamann-Borrero, J.E., Vafaee, M., Komissinskiy, P., Macke, S., Sutarto, R., He, F., Büchner, B., Sawatzky, G.A., Alff, L., Geck, J.

The analysis of x-ray reflectivity data from artificial heterostructures usually relies on the homogeneity of optical properties of the constituent materials. However, when the x-ray energy is tuned to the absorption edge of a particular resonant site, this assumption may no longer be appropriate. For samples realizing lattice planes with and without resonant sites, the corresponding regions containing the sites at resonance will have optical properties very different from regions without those sites. In this situation, models assuming homogeneous optical properties throughout the material can fail to describe the reflectivity adequately. As we show here, resonant soft x-ray reflectivity is sensitive to these variations, even though the wavelength is typically large as compared to the atomic distances over which the optical properties vary. We have therefore developed a scheme for analyzing resonant soft x-ray reflectivity data, which takes the atomic structure of a material into account by 'slicing' it into atomic planes with characteristic optical properties. Using LaSrMnO4 as an example, we discuss both the theoretical and experimental implications of this approach. Our analysis not only allows to determine important structural information such as interface terminations and stacking of atomic layers, but also enables to extract depth-resolved spectroscopic information with atomic resolution, thus enhancing the capability of the technique to study emergent phenomena at surfaces and interfaces.

2020, Zwiebler, M., Di Gennaro, E., Hamann-Borrero, J.E., Ritschel, T., Green, R.J., Sawatzky, G.A., Schierle, E., Weschke, E., Leo, A., Granozio, F. Miletto, Geck, J.

We present a combined resonant soft X-ray reflectivity and electric transport study of LaAlO 3/SrTiO 3 field effect devices. The depth profiles with atomic layer resolution that are obtained from the resonant reflectivity reveal a pronounced temperature dependence of the two-dimensional electron liquid at the LaAlO 3/SrTiO 3 interface. At room temperature the corresponding electrons are located close to the interface, extending down to 4 unit cells into the SrTiO 3 substrate. Upon cooling, however, these interface electrons assume a bimodal depth distribution: They spread out deeper into the SrTiO 3 and split into two distinct parts, namely one close to the interface with a thickness of about 4 unit cells and another centered around 9 unit cells from the interface. The results are consistent with theoretical predictions based on oxygen vacancies at the surface of the LaAlO 3 film and support the notion of a complex interplay between structural and electronic degrees of freedom. © 2020, The Author(s).