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Author: Hasović, E. × Subject: Ionization of gases ×

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Now showing 1 - 2 of 2
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    Imaging of carrier-envelope phase effects in above-threshold ionization with intense few-cycle laser fields
    (College Park, MD : Institute of Physics Publishing, 2008) Kling, M.F.; Rauschenberger, J.; Verhoef, A.J.; Hasović, E.; Uphues, T.; Milošević, D.B.; Muller, H.G.; Vrakking, M.J.J.
    Sub-femtosecond control of the electron emission in above-threshold ionization of the rare gases Ar, Xe and Kr in intense few-cycle laser fields is reported with full angular resolution. Experimental data that were obtained with the velocity-map imaging technique are compared to simulations using the strong-field approximation (SFA) and full time-dependent Schrödinger equation (TDSE) calculations. We find a pronounced asymmetry in both the energy and angular distributions of the electron emission that critically depends on the carrier-envelope phase (CEP) of the laser field. The potential use of imaging techniques as a tool for single-shot detection of the CEP is discussed. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Atomic processes in bicircular fields
    (Bristol : IOP Publ., 2016) Odžak, S.; Hasović, E.; Becker, W.; Milošević, D.B.
    We investigate laser-assisted electron-ion recombination (LAR), high-order harmonic generation (HHG) and above-threshold ionization (ATI) of argon atoms by a bicircular laser field, which consists of two coplanar counter-rotating circularly polarized fields of frequencies rω and sω. The energy of soft x rays generated in the LAR process is analyzed as a function of the incident electron angle and numerical results of direct recombination of electrons with Ar+ ions are presented. We also present the results of HHG by a bicircular field and confirm the selection rules derived earlier for inert-gas atoms in a p ground state. We show that the photoelectron spectra in the ATI process, presented in the momentum plane, as well as the LAR spectra exhibit the same discrete rotational symmetry as the applied field.