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- ItemA 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology(London : Inst. of Physics, 2019) Iacobucci, G.; Cardarelli, R.; Débieux, S.; Di Bello, F.A.; Favre, Y.; Hayakawa, D.; Kaynak, M.; Nessi, M.; Paolozzi, L.; Rücker, H.; Sultan, D.M.S.; Valerio, P.A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 µm and 130 µm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e- for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. © 2019 CERN.