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Author: Hayakawa, D. × Subject: Solid state detectors ×

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    Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project
    (London : Inst. of Physics, 2019) Paolozzi, L.; Bandi, Y.; Cardarelli, R.; Débieux, S.; Favre, Y.; Ferrère, D.; Forshaw, D.; Hayakawa, D.; Iacobucci, G.; Kaynak, M.; Miucci, A.; Nessi, M.; Ripiccini, E.; Rücker, H.; Valerio, P.; Weber, M.
    The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 03 × 1 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 µm and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9% and a time resolution down to 110 ps. © 2019 CERN.
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    A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
    (London : Inst. of Physics, 2019) Iacobucci, G.; Cardarelli, R.; Débieux, S.; Di Bello, F.A.; Favre, Y.; Hayakawa, D.; Kaynak, M.; Nessi, M.; Paolozzi, L.; Rücker, H.; Sultan, D.M.S.; Valerio, P.
    A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 µm and 130 µm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e- for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. © 2019 CERN.