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Author: Heitmann, Johannes ×

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    New charge-transfer states in blends of ZnPC with F8ZnPC
    (College Park, ML : American Institute of Physics, 2021) Graf, Lukas; Ortstein, Katrin; Doctor, Louis P.; Naumann, Marco; Beyer, Jan; Heitmann, Johannes; Leo, Karl; Knupfer, Martin
    With the aim of pushing the knowledge and understanding on mixed films of organic semiconductors forward, blends of ZnPC and F8ZnPC in different ratios are manufactured. The films have a polycrystalline structure, as indicated by electron diffraction profiles and infrared-spectroscopy. Photoluminescence data show completely different spectra for the blends, compared to the pure materials, which can be ascribed to the suppressing of excimer formation and the appearance of a new charge-transfer excitation between the two different molecules in the blends. This new excitation can also be seen in optical absorption. Momentum dependent measurements of the electronic excitations by electron energy-loss spectroscopy confirm the localized character of the new charge-transfer excitation in the blends. Our experimental data help understand the important issue of donor/acceptor coupling in organic semiconductors.
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    Growth and Properties of Intentionally Carbon-Doped GaN Layers
    (Weinheim : Wiley-VCH, 2019) Richter, Eberhard; Beyer, Franziska C.; Zimmermann, Friederike; Gärtner, Günter; Irmscher, Klaus; Gamov, Ivan; Heitmann, Johannes; Weyers, Markus; Tränkle, Günther
    Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 1010 Ω cm at room temperature found for a carbon concentration of 8.8 × 1018 cm−3. For higher carbon levels up to 3.5 × 1019 cm−3, a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as CN with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, CN-a-CGa-a-CN and CN-a-CGa-c-CN, are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 1018 cm−3. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    Current Status of Carbon‐Related Defect Luminescence in GaN
    (Weinheim : Wiley-VCH, 2021) Zimmermann, Friederike; Beyer, Jan; Röder, Christian; Beyer, Franziska C.; Richter, Eberhard; Irmscher, Klaus; Heitmann, Johannes
    Highly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact on the optical and electrical properties of GaN has been widely debated in the scientific community. For further improvement of device performance, a better understanding of the role of related defects is essential. To study optically active point defects, photoluminescence is one of the most frequently used experimental characterization techniques. Herein, the main recent advances in the attribution of carbon-related photoluminescence bands are reviewed, which were enabled by the interplay of a refinement of growth and characterization techniques and state-of-the-art first-principles calculations developed during the last decade. The predicted electronic structures of isolated carbon defects and selected carbon-impurity complexes are compared to experimental results. Taking into account both of these, a comprehensive overview on the present state of interpretation of carbon-related broad luminescence bands in bulk GaN is presented.