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    Enhancement of switching speed of BiFeO3 capacitors by magnetic fields
    (New York : American Institute of Physics, 2014) Guo, E.J.; Das, S.; Herklotz, A.
    The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO) capacitors with La0.8Ca0.2MnO3 (LCMO) bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.
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    Strain-controlled switching kinetics of epitaxial PbZr0.52Ti0.48O3 films
    (Milton Park : Taylor & Francis, 2013) Herklotz, A.; Guo, E.-J.; Biegalski, M.D.; Christen, H.-M.; Schultz, L.; Dörr, K.
    We investigate the effect of biaxial strain on the switching of ferroelectric thin films. The strain state of epitaxial PbZr0.52Ti0.48O3 films is controlled directly and reversibly by the use of piezoelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 (001) substrates. At small external electric fields, the films show switching characteristics consistent with a creep-like domain wall motion. In this regime, we find a huge decrease of the switching time under compressive strain. For larger external electric fields, the domain wall motion is in a depinning regime. The effect of compressive strain is more moderate in this region and shows a reduction in the switching kinetics.