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Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots

2018, Lazić, S., Chernysheva, E., Hernández-Mínguez, A., Santos, P.V., van der Meulen, H.P.

On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum dot (QD)-like exciton localization centers induced by compositional fluctuations within the InGaN nanoshell were identified using stroboscopic micro-photoluminescence (micro-PL) spectroscopy. They exhibit narrow and almost fully linearly polarized emission lines in the micro-PL spectra and a pronounced anti-bunching signature of single photon emission in the photon correlation experiments. When the nanowire is perturbed by the propagating SAW, the embedded QD is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within a ~1.5 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome can be further combined with spectral detection filtering for temporal control of the emitted photons. The effect of the SAW piezoelectric field on the QD charge population and on the optical polarization degree is also observed. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies).

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Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems

2018-6-18, Gradl, C., Winkler, R., Kempf, M., Holler, J., Schuh, D., Bougeard, D., Hernández-Mínguez, A., Biermann, K., Santos, P.V., Schüller, C., Korn, T.

The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to common spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman interaction. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performing time-resolved Kerr rotation measurements, we found a nondiagonal tensor g that manifests itself in unusual precessional motion, as well as distinct dependencies of hole-spin dynamics on the direction of the magnetic field B. We quantify the individual components of the tensor g for [113]-, [111]-, and [110]-grown samples. We complement the experiments by a comprehensive theoretical study of Zeeman coupling in in-plane and out-of-plane fields B. To this end, we develop a detailed multiband theory for the tensor g. Using perturbation theory, we derive transparent analytical expressions for the components of the tensor g that we complement with accurate numerical calculations based on our theoretical framework. We obtain very good agreement between experiment and theory. Our study demonstrates that the tensor g is neither symmetric nor antisymmetric. Opposite off-diagonal components can differ in size by up to an order of magnitude. The tensor g encodes not only the Zeeman energy splitting but also the direction of the axis about which the spins precess in the external field B. In general, this axis is not aligned with B. Hence our study extends the general concept of optical orientation to the regime of nontrivial Zeeman coupling.