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- ItemTwo-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping(Woodbury, NY : Inst., 2020) Papadogianni, Alexandra; Rombach, Julius; Berthold, Theresa; Polyakov, Vladimir; Krischok, Stefan; Himmerlich, Marcel; Bierwagen, OliverIn2O3 is an n-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant semiconductors, such as InAs, InN, SnO2, and ZnO. Even though the SEAL is within the core of the application of In2O3 in conductometric gas sensors, a consistent set of transport properties of this two-dimensional electron gas (2DEG) is missing in the present literature. To this end, we investigate high-quality single-crystalline as well as textured doped and undoped In2O3(111) films grown by plasma-assisted molecular beam epitaxy to extract transport properties of the SEAL by means of Hall effect measurements at room temperature while controlling the oxygen adsorbate coverage via illumination. The resulting sheet electron concentration and mobility of the SEAL are ≈1.5×1013cm−2 and ≈150cm2/Vs, respectively, both of which are strongly reduced by oxygen-related surface adsorbates from the ambient air. Our transport measurements further demonstrate a systematic reduction of the SEAL by doping In2O3 with the deep compensating bulk acceptors Ni or Mg. This finding is supported by x-ray photoelectron spectroscopy (XPS) measurements of the surface band bending and SEAL electron emission. Quantitative analyses of these XPS results using self-consistent, coupled Schrödinger-Poisson calculations indicate the simultaneous formation of compensating bulk donor defects (likely oxygen vacancies), which almost completely compensate the bulk acceptors. Finally, an enhancement of the thermopower by reduced dimensionality is demonstrated in In2O3: Seebeck coefficient measurements of the surface 2DEG with partially reduced sheet electron concentrations between 3×1012 and 7×1012cm−2 (corresponding average volume electron concentration between 1×1019 and 2.3×1019cm−3) indicate a value enhanced by ≈80% compared to that of bulk Sn-doped In2O3 with comparable volume electron concentration.
- ItemInfluence of wavelength and accumulated fluence at picosecond laser-induced surface roughening of copper on secondary electron yield(Melville, NY : American Inst. of Physics, 2023) Bez, Elena; Himmerlich, Marcel; Lorenz, Pierre; Ehrhardt, Martin; Gunn, Aidan Graham; Pfeiffer, Stephan; Rimoldi, Martino; Taborelli, Mauro; Zimmer, Klaus; Chiggiato, Paolo; Anders, AndréUltrashort-pulse laser processing of copper is performed in air to reduce the secondary electron yield (SEY). By UV (355 nm), green (532 nm), and IR (1064 nm) laser-light induced surface modification, this study investigates the influence of the most relevant experimental parameters, such as laser power, scanning speed, and scanning line distance (represented as accumulated fluence) on the ablation depth, surface oxidation, topography, and ultimately on the SEY. Increasing the accumulated laser fluence results in a gradual change from a Cu 2 O to a CuO-dominated surface with deeper micrometer trenches, higher density of redeposited surface particles from the plasma phase, and a reduced SEY. While the surface modifications are less pronounced for IR radiation at low accumulated fluence (,1000 J/cm2 ), analogous results are obtained for all wavelengths when reaching the nonlinear absorption regime, for which the SEY maximum converges to 0.7. Furthermore, independent of the extent of the structural transformations, an electron-induced surface conditioning at 250 eV allows a reduction of the SEY maximum below unity at doses of 5×10 -4 C/mm2 . Consequently, optimization of processing parameters for application in particle accelerators can be obtained for a sufficiently low SEY at controlled ablation depth and surface particle density, which are factors that limit the surface impedance and the applicability of the material processing for ultrahigh vacuum systems. The relations between pro- cessing parameters and surface features will provide guidance in treating the surface of vacuum components, especially beam screens of selected magnets of the Large Hadron Collider or of future colliders.
- ItemSecondary electron yield engineering of copper surfaces by 532 nm ultrashort laser pulses(Amsterdam [u.a.] : Elsevier, 2022) Lorenz, Pierre; Bez, Elena; Himmerlich, Marcel; Ehrhardt, Martin; Taborelli, Mauro; Zimmer, KlausNanostructured surfaces exhibit outstanding properties and enable manifold industrial applications. In this study the laser surface processing of polycrystalline, flat copper surfaces by 532 nm picosecond laser irradiation for secondary electron yield (SEY) reduction is reported. The laser beam was scanned in parallel lines across the sample surface in order to modify large surface areas. Morphology and SEY are characterized in dependence of the process parameters to derive correlations and mechanisms of the laser-based SEY engineering process. The nano- and microstructure morphology of the laser-modified surface was characterized by scanning electron microscopy and the secondary electron yield was measured. In general, an SEY reduction with increasing accumulated laser fluence was found. In particular, at low scanning speed (1 mm/s - 10 mm/s) and “high” laser power (~ 1 W) compact nanostructures with a very low SEY maximum of 0.7 are formed.