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Investigation of the strain-sensitive superconducting transition of BaFe1.8Co0.2As2 thin films utilizing piezoelectric substrates
2014, Trommler, S., Hänisch, J., Iida, K., Kurth, F., Schultz, L., Holzapfel, B., Hühne, R.
The preparation of biaxially textured BaFe1.8Co0.2As2 thin films has been optimized on MgO single crystals and transfered to piezoelectric (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. By utilizing the inverse piezoelectric effect the lattice parameter of these substrates can be controlled applying an electric field, leading to a induction of biaxial strain into the superconducting layer. High electric fields were used to achieve a total strain of up to 0.05% at low temperatures. A sharpening of the resistive transition and a shift of about 0.6 K to higher temperatures was found at a compressive strain of 0.035%.
BaFe2As2/Fe bilayers with [001]-tilt grain boundary on MgO and SrTiO3 bicrystal substrates
2013, Iida, K., Haindl, S., Kurth, F., Hänisch, J., Schulz, L., Holzapfel, B.
Co-doped BaFe2As2 (Ba-122) can be realized on both MgO and SrTiO3 bicrystal substrates with [001]-tilt grain boundary by employing Fe buffer layers. However, an additional spinel (i.e. MgAl 2O4) buffer between Fe and SrTiO3 is necessary since an epitaxial, smooth surface of Fe layer can not be grown on bare SrTiO3. Both types of bicrystal films show good crystalline quality.
Bicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films
2014, Schmidt, S., Döring, S., Schmidl, F., Kurth, F., Iida, K., Holzapfel, B., Kawaguchi, T., Mori, Y., Ikuta, H., Seidel, P.
We prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.
Temperature-dependent electric noise level in different iron-based superconductors
2014, Barone, C., Pagano, S., Bellingeri, E., Ferdeghini, C., Adamo, M., Sarnelli, E., Yokoyama, K., Kurth, F., Holzapfel, B, Iida, K.
The magnetic flux penetration into the melt-textured Y-Ba-Cu-O high temperature superconducting bulk magnets were precisely evaluated during and after the pulsed field magnetization processes operated at 30 K. The bulk magnets were carefully fabricated by the cold seeding method with use of a single and a pair of seed crystals composed of the Nd-Ba-Cu-O thin films. These seed crystals were put on the top surfaces of the precursors to let the large grains grow during the heat treatments. We observed the flux penetrations which occurred in the lower applied-field regions at around 3.1 T for the samples bearing the twin seeds than those of the single-seeded crystals at around 3.8 T. This means that the magnetic fluxes are capable of invading into the twin-seeded samples more easily than the single-seeds. It suggests that the anisotropic grain growths of parallel and normal to the rows of seed crystals affects the variations of Jc values with different distributions of the pinning centers, results in the preferential paths for the invading magnetic fluxes.