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Author: Jenichen, B. × Subject: Carbon dioxide ×

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Now showing 1 - 3 of 3
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    Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure
    (New York : American Institute of Physics, 2015) Dau, M.T.; Jenichen, B.; Herfort, J.
    Investigation of the thickness dependence of the magnetic anisotropy in B2-type Co2TiSi films on GaAs(001), shows a pronounced perpendicular magnetic anisotropy at 10 K for thicknesses up to 13.5 nm. We have evidenced that the interfacial anisotropy induced by interface clusters has a strong influence on the perpendicular magnetic anisotropy of this hybrid structure, especially at temperatures lower than the blocking temperature of the clusters (28 K). However, as this influence can be ruled out at higher temperatures, the perpendicular magnetic anisotropy which is found to persist up to room-temperature can be ascribed to the magnetic properties of the Co2TiSi films. For thicknesses larger than 15.0 nm, we observe an alignment of the magnetic easy axis parallel to the sample surface, which is most likely due to the shape anisotropy and the film structure.
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    Characterization of L21 order in Co2FeSi thin films on GaAs
    (Bristol : Institute of Physics Publishing, 2013) Jenichen, B.; Hentschel, T.; Herfort, J.; Kong, X.; Trampert, A.; Zizak, I.
    Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21 and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L21 ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio.
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    Structural properties of Co2TiSi films on GaAs(001)
    (New York : American Institute of Physics, 2016) Jenichen, B.; Herfort, J.; Hanke, M.; Jahn, U.; Kong, X.; Dau, M.T.; Trampert, A.; Kirmse, H.; Erwin, S.C.
    Co2TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the L21 and B2 structures and considering the influence of non-stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13 nm, these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found L21 and B2 ordered regions, however the [Co]/[Ti]-ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic B2-ordering with the best order parallel to the axes of the columns.