Search Results

Now showing 1 - 3 of 3
  • Item
    In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
    (London : Nature Publishing Group, 2017) Knight, Sean; Hofmann, Tino; Bouhafs, Chamseddine; Armakavicius, Nerijus; Kühne, Philipp; Stanishev, Vallery; Ivanov, Ivan G.; Yakimova, Rositsa; Wimer, Shawn; Schubert, Mathias; Darakchieva, Vanya
    Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.
  • Item
    Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
    (Amsterdam [u.a.] : Elsevier Science, 2021) Armakavicius, Nerijus; Kühne, Philipp; Eriksson, Jens; Bouhafs, Chamseddine; Stanishev, Vallery; Ivanov, Ivan G.; Yakimova, Rositsa; Zakharov, Alexei A.; Al-Temimy, Ameer; Coletti, Camilla; Schubert, Mathias; Darakchieva, Vanya
    In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-free-standing-bilayer epitaxial graphene on 4H–SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasi-free-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene. © 2020 Elsevier Ltd
  • Item
    On the anomalous optical conductivity dispersion of electrically conducting polymers: Ultra-wide spectral range ellipsometry combined with a Drude-Lorentz model
    (London [u.a.] : RSC, 2019) Chen, Shangzhi; Kühne, Philipp; Stanishev, Vallery; Knight, Sean; Brooke, Robert; Petsagkourakis, Ioannis; Crispin, Xavier; Schubert, Mathias; Darakchieva, Vanya; Jonsson, Magnus P.
    Electrically conducting polymers (ECPs) are becoming increasingly important in areas such as optoelectronics, biomedical devices, and energy systems. Still, their detailed charge transport properties produce an anomalous optical conductivity dispersion that is not yet fully understood in terms of physical model equations for the broad range optical response. Several modifications to the classical Drude model have been proposed to account for a strong non-Drude behavior from terahertz (THz) to infrared (IR) ranges, typically by implementing negative amplitude oscillator functions to the model dielectric function that effectively reduce the conductivity in those ranges. Here we present an alternative description that modifies the Drude model via addition of positive-amplitude Lorentz oscillator functions. We evaluate this so-called Drude-Lorentz (DL) model based on the first ultra-wide spectral range ellipsometry study of ECPs, spanning over four orders of magnitude: from 0.41 meV in the THz range to 5.90 eV in the ultraviolet range, using thin films of poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) as a model system. The model could accurately fit the experimental data in the whole ultrawide spectral range and provide the complex anisotropic optical conductivity of the material. Examining the resonance frequencies and widths of the Lorentz oscillators reveals that both spectrally narrow vibrational resonances and broader resonances due to localization processes contribute significantly to the deviation from the Drude optical conductivity dispersion. As verified by independent electrical measurements, the DL model accurately determines the electrical properties of the thin film, including DC conductivity, charge density, and (anisotropic) mobility. The ellipsometric method combined with the DL model may thereby become an effective and reliable tool in determining both optical and electrical properties of ECPs, indicating its future potential as a contact-free alternative to traditional electrical characterization. © The Royal Society of Chemistry 2019.