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Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2 O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.
Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems
In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.