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Twinning phenomena along and beyond the bain path
Twinning is a phenomenon that occurs, e.g., during deformation, martensitic transformation and film growth. The present study shows that the crystallography of twinning can be described by two twinning modes along the complete Bain transformation path and beyond connecting body-centered and face-centered cubic structures. To probe this concept, we used strained epitaxial films of the Fe-Pd magnetic shape memory system. As the substrate acts as an absolute reference frame, we could show by pole figure measurements that all observed twinning can be a body-centered and face-centered cubic twinning mode. This continuously transforms towards identity when approaching the complementary structure.
The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films
Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.