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Author: Kittler, M. × DDC: 620 ×

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    Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes
    (London : Hindawi, 2012) Kasper, E.; Oehme, M.; Arguirov, T.; Werner, J.; Kittler, M.; Schulze, J.
    Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems fromcarrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
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    Investigation of emitter homogeneity on laser doped emitters
    (Amsterdam [u.a.] : Elsevier, 2011) Germershausen, S.; Bartholomäus, L.; Seidel, U.; Hanisch, N.; Schieferdecker, A.; Küsters, K.H.; Kittler, M.; Ametowobla, M.; Einsele, F.; Dallmann, G.
    The selective emitter formation by laser doping is a well known process to increase the efficiency of silicon solar cells [1], [2]. For the characterization of laser doped emitters, SIMS (Secondary Ion Mass Spectroscopy) and ECV (Electrochemical Capacitance Voltage Measurement) techniques are used to analyze the emitter profile [3]. It is very difficult to get acceptable result by SIMS on a textured surface, so only ECV can be used. It has been shown, that a charge carrier depth profile can be measured on a homogeneous emitter only by ECV. The use of laser doping results in a non-homogeneous emitter. We have shown that the emitter depth is not just a function of the pulse power, but in addition of the surface structure of the wafer. The texture seems responsible for a strong variability in the doping profile. It has been shown, that the ECV measurement is not applicable to characterize the emitter depth on laser doped areas, because of the microscopic inhomogeneities in the emitter on the macroscopic measurement area. The real emitter profiles are to complex to be characterized by SIMS or ECV. We have shown that the variation in the emitter profile is resulting from the texture in the laser-doped regions.