Filters

2013 - 20203

More filters

2019 - 201922020 - 20221
Reset filters

Settings

Author: Knauer, A. × Subject: Konferenzschrift ×

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
    (London [u.a.] : Institute of Physics, 2020) Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P.R.; Hourahine, B.; Kraeusel, S.; Kusch, G.; Jablon, B.M.; Johnston, R.; Martin, R.W.; Mcdermott, R.; Naresh-Kumar, G.; Nouf-Allehiani, M.; Pascal, E.; Thomson, D.; Vespucci, S.; Mingard, K.; Parbrook, P.J.; Smith, M.D.; Enslin, J.; Mehnke, F.; Kneissl, M.; Kuhn, C.; Wernicke, T.; Knauer, A.; Hagedorn, S.; Walde, S.; Weyers, M.; Coulon, P.-M.; Shields, P.A.; Zhang, Y.; Jiu, L.; Gong, Y.; Smith, R.M.; Wang, T.; Winkelmann, A.
    In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on crystal structure, crystal misorientation, grain boundaries, strain and structural defects on length scales from tens of nanometres to tens of micrometres. Here we report on the imaging and analysis of dislocations and sub-grains in nitride semiconductor thin films (GaN and AlN) and tungsten carbide-cobalt (WC-Co) hard metals. Our aim is to illustrate the capability of these techniques for investigating structural defects in the SEM and the benefits of combining these diffraction-based imaging techniques.
  • Thumbnail Image
    Item
    Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN on epitaxial laterally overgrown AlN/sapphire templates
    (Milton Park : Taylor & Francis, 2013) Zeimer, U.; Mogilatenko, A.; Kueller, V.; Knauer, A.; Weyers, M.
    Surface steps as high as 15 nm on up to 10 μm thick AlN layers grown on patterned AlN/sapphire templates play a major role for the structural and optical properties of AlxGa1−xN layers with x ≥ 0.5 grown subsequently by metalorganic vapour phase epitaxy. The higher the Ga content in these layers is, the stronger is the influence of the surface morphology on their properties. For x = 0.5 not only periodic inhomogeneities in the Al content due to growth of Ga-rich facets are observed by cathodoluminescence, but these facets give rise to additional dislocation formation as discovered by annular dark-field scanning transmission electron microscopy. For AlxGa1−xN layers with x = 0.8 the difference in Al content between facets and surrounding material is much smaller. Therefore, the threading dislocation density (TDD) is only defined by the TDD in the underlying epitaxially laterally overgrown (ELO) AlN layer. This way high quality Al0.8Ga0.2N with a thickness up to 1.5 μm and a TDD ≤ 5x108 cm−2 was obtained.
  • Thumbnail Image
    Item
    Normally-off GaN transistors for power applications
    (Milton Park : Taylor & Francis, 2014) Hilt, O.; Bahat-Treidel, E.; Brunner, F.; Knauer, A.; Zhytnytska, R.; Kotara, P.; Wuerfl, J.
    Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.