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Now showing 1 - 4 of 4
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    Spin Nernst effect in a p-band semimetal InBi
    (Bristol : IOP Publishing, 2020) Zhang, Yang; Xu, Qiunan; Koepernik, Klaus; Fu, Chenguang; Gooth, Johannes; van den Brink, Jeroen; Felser, Claudia; Sun, Yan
    Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin Nernst effect (SNE), the thermoelectrical counterpart of the SHE, has attracted much interest. Empirically strong SHEs and SNEs are associated with d-band compounds, such as transition metals and their alloys—the largest spin Hall conductivity (SHC) in a p-band material is $\sim 450\left(\hslash /e\right){\left({\Omega}\enspace \mathrm{c}\mathrm{m}\right)}^{-1}$ for a Bi–Sb alloy, which is only about a fifth of platinum. This raises the question whether either the SHE and SNE are naturally suppressed in p-bands compounds, or favourable p-band systems were just not identified yet. Here we consider the p-band semimetal InBi, and predict it has a record SHC ${\sigma }_{xy}^{z}\approx 1100\enspace \left(\hslash /e\right){\left({\Omega}\enspace \mathrm{c}\mathrm{m}\right)}^{-1}$ which is due to the presence of nodal lines in its band structure. Also the spin-Nernst conductivity ${\alpha }_{zx}^{y}\approx 1.2\enspace \left(\hslash /e\right)\left(A/m\cdot K\right)$ is very large, but our analysis shows its origin is different as the maximum appears in a different tensor element compared to that in SHC. This insight gained on InBi provides guiding principles to obtain a strong SHE and SNE in p-band materials and establishes a more comprehensive understanding of the relationship between the SHE and SNE.
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    Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect
    (London : Nature Publ. Group, 2021) Zhang, Yang; Xu, Qiunan; Koepernik, Klaus; Rezaev, Roman; Janson, Oleg; Železný, Jakub; Jungwirth, Tomáš; Felser, Claudia; van den Brink, Jeroen; Sun, Yan
    Spin Hall effect (SHE) has its special position in spintronics. To gain new insight into SHE and to identify materials with substantial spin Hall conductivity (SHC), we performed high-precision high-throughput ab initio calculations of the intrinsic SHC for over 20,000 nonmagnetic crystals. The calculations revealed a strong relationship between the magnitude of the SHC and the crystalline symmetry, where a large SHC is typically associated with mirror symmetry-protected nodal line band structures. This database includes 11 materials with an SHC comparable to or even larger than that of Pt. Materials with different types of spin currents were additionally identified. Furthermore, we found that different types of spin current can be obtained by rotating applied electrical fields. This improves our understanding and is expected to facilitate the design of new types of spin-orbitronic devices.
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    Sixfold fermion near the Fermi level in cubic PtBi2
    (Amsterdam : SciPost Foundation, 2021) Thirupathaiah, Setti; Kushnirenko, Yevhen; Koepernik, Klaus; Piening, Boy Roman; Büchner, Bernd; Aswartham, Saicharan; van den Brink, Jeroen; Borisenko, Sergey; Fulga, Ion Cosma
    We show that the cubic compound PtBi2, is a topological semimetal hosting a sixfold band touching point in close proximity to the Fermi level. Using angle-resolved photoemission spectroscopy, we map the bandstructure of the system, which is in good agreement with results from density functional theory. Further, by employing a low energy effective Hamiltonian valid close to the crossing point, we study the effect of a magnetic field on the sixfold fermion. The latter splits into a total of twenty Weyl cones for a Zeeman field oriented in the diagonal, [111] direction. Our results mark cubic PtBi2, as an ideal candidate to study the transport properties of gapless topological systems beyond Dirac and Weyl semimetals.
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    Correlation between topological band character and chemical bonding in a Bi14Rh3I9-based family of insulators
    (London : Nature Publishing Group, 2016) Rasche, Bertold; Isaeva, Anna; Ruck, Michael; Koepernik, Klaus; Richter, Manuel; van den Brink, Jeroen
    Recently the presence of topologically protected edge-states in Bi14Rh3I9 was confirmed by scanning tunnelling microscopy consolidating this compound as a weak 3D topological insulator (TI). Here, we present a density-functional-theory-based study on a family of TIs derived from the Bi14Rh3I9 parent structure via substitution of Ru, Pd, Os, Ir and Pt for Rh. Comparative analysis of the band-structures throughout the entire series is done by means of a unified minimalistic tight-binding model that evinces strong similarity between the quantum-spin-Hall (QSH) layer in Bi14Rh3I9 and graphene in terms of -molecular orbitals. Topologically non-trivial energy gaps are found for the Ir-, Rh-, Pt- and Pd-based systems, whereas the Os- and Ru-systems remain trivial. Furthermore, the energy position of the metal -band centre is identified as the parameter which governs the evolution of the topological character of the band structure through the whole family of TIs. The -band position is shown to correlate with the chemical bonding within the QSH layers, thus revealing how the chemical nature of the constituents affects the topological band character.