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Author: Koester, Jan-Philipp × Subject: traveling-wave model ×

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Now showing 1 - 2 of 2
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    Spatially modulated broad-area lasers for narrow lateral far-field divergence
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2021) Zeghuzi, Anissa; Koester, Jan-Philipp; Radziunas, Mindaugas; Christopher, Heike; Wenzel, Hans; Knigge, Andrea
    A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3-degree full width at half maximum where a 0.4-degree-wide main lobe contains 40% of the emitted optical output power. While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central one-degree angular range, the measured far-field intensity outside of the obtained central peak remains high.
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    Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Koester, Jan-Philipp; Radziunas, Mindaugas; Zeghuzi, Anissa; Wenzel, Hans; Knigge, Andrea
    We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and the generation of THz radiation. To achieve a more compact device compared to previous GaAs based designs two etch depths are realized, leading to shallowly etched ridge waveguides in regions were optical gain is applied and deeply etched waveguides used to enable compact integrated waveguide components. The device parameters are optimized using a numerically efficient simulation tool for passive waveguides. Subsequently, the entire laser system is further analyzed applying a sophisticated traveling-wave equation based model for active devices giving access to internal intensity and carrier density distributions. It is shown that active laser simulations are crucial to deduce critical and performance limiting design aspects not accessible via an all-passive simulation.