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Formation of resonant bonding during growth of ultrathin GeTe films
2017, Wang, Ruining, Zhang, Wei, Momand, Jamo, Ronneberger, Ider, Boschker, Jos E., Mazzarello, Riccardo, Kooi, Bart J., Riechert, Henning, Wuttig, Matthias, Calarco, Raffaella
A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of four GeTe bilayers is reached, subsequently following the GeTe(111)