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- ItemInvestigation of the copper gettering mechanism of oxide precipitates in silicon(Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Klingsporn, M.; Schubert, M.A.; Sattler, A.; Müller, T.One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet clarified is that it was not possible to identify the presence and measure the copper concentration in the vicinity of oxide precipitates. To overcome the problem we used a 14.5 nm thick thermal oxide layer as a model system for an oxide precipitate to localize the place where the copper is collected. We also analyzed a plate-like oxide precipitate by EDX and EELS and compared the results with the analysis carried out on the oxide layer. It is demonstrated that both the interface between the oxide precipitate being SiO2 and the silicon matrix and the interface between the thermal oxide and silicon consist of a 2–3 nm thick SiO layer. As the results of these experiments also show that copper segregates at the SiO interface layer of the thermal oxide it is concluded that gettering of copper by oxide precipitates is based on segregation of copper to the SiO interface layer.
- ItemDislocation generation and propagation during flash lamp annealing(Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Schubert, M.A.; Sattler, A.Dislocation generation and propagation during flash lamp annealing for 20 ms was investigated using wafers with sawed, ground, and etched surfaces. Due to the thermal stress resulting from the temperature profiles generated by the flash pre-existing dislocations propagate into the wafer from both surfaces during flash lamp annealing. A dislocation free zone was observed around 700 μm depth below the surface of a 900 μm thick sawed wafer. The dislocation propagation can be well described by a three-dimensional mechanical model. It was further demonstrated that in wafers being initially free of dislocations no dislocations are generated during flash lamp annealing.