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In situ Raman spectroscopy on silicon nanowire anodes integrated in lithium ion batteries
2019, Krause, A., Tkacheva, O., Omar, A., Langklotz, U., Giebeler, L., Dörfler, S., Fauth, F., Mikolajick, T., Weber, W.M.
Rapid decay of silicon anodes during lithiation poses a significant challenge in application of silicon as an anode material in lithium ion batteries. In situ Raman spectroscopy is a powerful method to study the relationship between structural and electrochemical data during electrode cycling and to allow the observation of amorphous as well as liquid and transient species in a battery cell. Herein, we present in situ Raman spectroscopy on high capacity electrode using uncoated and carbon-coated silicon nanowires during first lithiation and delithiation cycle in an optimized lithium ion battery setup and complement the results with operando X-ray reflection diffraction measurements. During lithiation, we were able to detect a new Raman signal at 1859 cm−1 especially on uncoated silicon nanowires. The detailed in situ Raman measurement of the first lithiation/delithiation cycle allowed to differentiate between morphology changes of the electrode as well as interphase formation from electrolyte components.
Förderschwerpunkt Laser 2000: Grundlegende Untersuchungen zur hochgenauen, berührungslosen laserinterferometrischen Messung großer Längen im Maschinenbau, Teilvorhaben: Grundlegende Untersuchungen leistungsstarker durchstimmbarer Halbleiterlaserdioden : Schlußbericht
2000, Erbert, G., Brugge, F., Fechner, I., Fredrich, D., Gielow, M., Hofmann, L., Klehr, A., Klein, A., Krause, A., Knauer, A., Olschewsky, R., Oster, A., Rechenberg, I., Ressel, P., Sebastian, J., Selent, R., Smirnitzki, V., Tessaro, T., Thiemann, M., Thies, A., Vogel, K., Wenzel, H., Weyers, M., Würfel, J., Wochatz, P.
[no abstract available]
Förderschwerpunkt NOVALAS : Grundlegende Untersuchungen zur Technologie von Hochleistungsdiodenlasern, Teilvorhaben: Hochleistungsdiodenlaser auf der Basis von Al-freien Quantengräben und Wellenleitern im Wellenlängenbereich 800 - 1000 nm ; Schlussbericht
2001, Erbert, G., Beister, G., Brade, P., Fechner, I., Fredrich, D., Fricke, J., Gielow, M., Hülsewede, R., Klein, A., Krause, A., Knauer, A., Maege, J., Pittroff, W., Olschewsky, R., Rechenberg, I., Ressel, P., Sebastian, J., Selent, R., Staske, R., Schulze, H., Sumpf, B, Tessaro, T., Vogel, K., Wenzel, H., Wiechmann, S., Weyers, M., Würfel, J., Wochatz, P.
[no abstract available]