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Author: Lü, Xiang × DDC: 620 ×

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    Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy
    (Washington, DC : Optical Society of America, 2017) Röben, Benjamin; Lü, Xiang; Hempel, Martin; Biermann, Klaus; Schrottke, Lutz; Grahn, Holger T.
    Terahertz (THz) quantum-cascade lasers (QCLs) are powerful radiation sources for high-resolution and high-sensitivity spectroscopy with a discrete spectrum between 2 and 5 THz as well as a continuous coverage of several GHz. However, for many applications, a radiation source with a continuous coverage of a substantially larger frequency range is required. We employed a multi-mode THz QCL operated with a fast ramped injection current, which leads to a collective tuning of equally-spaced Fabry-Pérot laser modes exceeding their separation. A continuous coverage over 72 GHz at about 4.7 THz was achieved. We demonstrate that the QCL is superior to conventional sources used in Fourier transform infrared spectroscopy in terms of the signal-to-noise ratio as well as the dynamic range by one to two orders of magnitude. Our results pave the way for versatile THz spectroscopic systems with unprecedented resolution and sensitivity across a wide frequency range.
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    Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys
    (London : Nature Publishing, 2018) Boschker, Jos E.; Lü, Xiang; Bragaglia, Valeria; Wang,Ruining; Grahn, Holger T.; Calarco, Raffaella
    Phase change materials such as pseudobinary GeTe-Sb2Te3 (GST) alloys are an essential part of existing and emerging technologies. Here, we investigate the electrical and optical properties of epitaxial phase change materials: α-GeTe, Ge2Sb2Te5 (GST225), and Sb2Te3. Temperature-dependent Hall measurements reveal a reduction of the hole concentration with increasing temperature in Sb2Te3 that is attributed to lattice expansion, resulting in a non-linear increase of the resistivity that is also observed in GST225. Fourier transform infrared spectroscopy at room temperature demonstrates the presence of electronic states within the energy gap for α-GeTe and GST225. We conclude that these electronic states are due to vacancy clusters inside these two materials. The obtained results shed new light on the fundamental properties of phase change materials such as the high dielectric constant and persistent photoconductivity and have the potential to be included in device simulations.