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Now showing 1 - 10 of 30
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    Effective diffusion in thin structures via generalized gradient systems and EDP-convergence
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Frenzel, Thomas; Liero, Matthias
    The notion of Energy-Dissipation-Principle convergence (EDP-convergence) is used to derive effective evolution equations for gradient systems describing diffusion in a structure consisting of several thin layers in the limit of vanishing layer thickness. The thicknesses of the sublayers tend to zero with different rates and the diffusion coefficients scale suitably. The Fokker--Planck equation can be formulated as gradient-flow equation with respect to the logarithmic relative entropy of the system and a quadratic Wasserstein-type gradient structure. The EDP-convergence of the gradient system is shown by proving suitable asymptotic lower limits of the entropy and the total dissipation functional. The crucial point is that the limiting evolution is again described by a gradient system, however, now the dissipation potential is not longer quadratic but is given in terms of the hyperbolic cosine. The latter describes jump processes across the thin layers and is related to the Marcelin--de Donder kinetics.
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    Passing from bulk to bulk/surface evolution in the Allen-Cahn equation
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012) Liero, Matthias
    In this paper we formulate a boundary layer approximation for an Allen-Cahn-type equation involving a small parameter $eps$. Here, $eps$ is related to the thickness of the boundary layer and we are interested in the limit when $eps$ tends to 0 in order to derive nontrivial boundary conditions. The evolution of the system is written as an energy balance formulation of the L^2-gradient flow with the corresponding Allen-Cahn energy functional. By transforming the boundary layer to a fixed domain we show the convergence of the solutions to a solution of a limit system. This is done by using concepts related to Gamma- and Mosco convergence. By considering different scalings in the boundary layer we obtain different boundary conditions.
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    p-Laplace thermistor modeling of electrothermal feedback in organic semiconductors
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Liero, Matthias; Koprucki, Thomas; Fischer, Axel; Scholz, Reinhard; Glitzky, Annegret
    In large-area Organic Light-Emitting Diodes (OLEDs) spatially inhomogeneous luminance at high power due to inhomogeneous current flow and electrothermal feedback can be observed. To describe these self-heating effects in organic semiconductors we present a stationary thermistor model based on the heat equation for the temperature coupled to a p-Laplace-type equation for the electrostatic potential with mixed boundary conditions. The p-Laplacian describes the non-Ohmic electrical behavior of the organic material. Moreover, an Arrhenius-like temperature dependency of the electrical conductivity is considered. We introduce a finite-volume scheme for the system and discuss its relation to recent network models for OLEDs. In two spatial dimensions we derive a priori estimates for the temperature and the electrostatic potential and prove the existence of a weak solution by Schauder's fixed point theorem.
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    3D electrothermal simulations of organic LEDs showing negative differential resistance
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, Sebastian
    Organic semiconductor devices show a pronounced interplay between temperature-activated conductivity and self-heating which in particular causes inhomogeneities in the brightness of large-area OLEDs at high power. We consider a 3D thermistor model based on partial differential equations for the electrothermal behavior of organic devices and introduce an extension to multiple layers with nonlinear conductivity laws, which also take the diode-like behavior in recombination zones into account. We present a numerical simulation study for a red OLED using a finite-volume approximation of this model. The appearance of S-shaped current-voltage characteristics with regions of negative differential resistance in a measured device can be quantitatively reproduced. Furthermore, this simulation study reveals a propagation of spatial zones of negative differential resistance in the electron and hole transport layers toward the contact.
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    On the evolutionary Gamma-convergence of gradient systems modeling slow and fast chemical reactions
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Disser, Karoline; Liero, Matthias; Zinsl, Jonathan
    We investigate the limit passage for a system of ordinary differential equations modeling slow and fast chemical reaction of mass-action type, where the rates of fast reactions tend to infinity. We give an elementary proof of convergence to a reduced dynamical system acting in the slow reaction directions on the manifold of fast reaction equilibria. Then we study the entropic gradient structure of these systems and prove an E-convergence result via Gamma-convergence of the primary and dual dissipation potentials, which shows that this structure carries over to the fast reaction limit. We recover the limit dynamics as a gradient flow of the entropy with respect to a pseudo-metric.
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    An evolutionary elastoplastic plate model derived via Gamma-convergence
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Liero, Matthias; Mielke, Alexander
    This paper is devoted to dimension reduction for linearized elastoplasticity in the rate-independent case. The reference configuration of the three-dimensional elastoplastic body has a two-dimensional middle surface and a positive but small thickness. Under suitable scalings we derive a limiting model for the case in which the thickness of the plate tends to 0. This model contains membrane and plate deformations (linear Kirchhoff--Love plate), which are coupled via plastic strains. We establish strong convergence of the solutions in the natural energy space. The analysis uses an abstract Gamma-convergence theory for rate-independent evolutionary systems that is based on the notion of energetic solutions. This concept is formulated via an energy-storage functional and a dissipation functional, such that energetic solutions are defined in terms of a stability condition and an energy balance. The Mosco convergence of the quadratic energy-storage functional follows the arguments of the elastic case. To handle the evolutionary situation the interplay with the dissipation functional is controlled by cancellation properties for Mosco-convergent quadratic energies
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    Unipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Fuhrmann, Jürgen; Doan, Duy Hai; Glitzky, Annegret; Liero, Matthias; Nika, Grigor
    We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.
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    The elliptic-regularization principle in Lagrangian mechanics
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Liero, Matthias; Stefanelli, Ulisse
    We present a novel variational approach to Lagrangian mechanics based on elliptic regularization with respect to time. A class of parameter-dependent global-in-time minimization problems is presented and the convergence of the respective minimizers to the solution of the system of Lagrange's equations is ascertained. Moreover, we extend this perspective to mixed dissipative/nondissipative situations, present a finite time-horizon version of this approach, and provide related Gamma-convergence results. Finally, some discussion on corresponding time-discrete versions of the principle is presented.
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    Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, Matthias
    We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
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    Systems describing electrothermal effects with p(x)-Laplacian like structure for discontinuous variable exponents
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Bulíc̆ek, Miroslav; Glitzky, Annegret; Liero, Matthias
    We consider a coupled system of two elliptic PDEs, where the elliptic term in the first equation shares the properties of the p(x)-Laplacian with discontinuous exponent, while in the second equation we have to deal with an a priori L1 term on the right hand side. Such a system of equations is suitable for the description of various electrothermal effects, in particular those, where the non-Ohmic behavior can change dramatically with respect to the spatial variable. We prove the existence of a weak solution under very weak assumptions on the data and also under general structural assumptions on the constitutive equations of the model. The main difficulty consists in the fact that we have to overcome simultaneously two obstacles