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- ItemHybrid finite-volume/finite-element schemes for p(x)-Laplace thermistor models(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe introduce an empirical PDE model for the electrothermal description of organic semiconductor devices by means of current and heat flow. The current flow equation is of p(x)-Laplace type, where the piecewise constant exponent p(x) takes the non-Ohmic behavior of the organic layers into account. Moreover, the electrical conductivity contains an Arrhenius-type temperature law. We present a hybrid finite-volume/finite-element discretization scheme for the coupled system, discuss a favorite discretization of the p(x)-Laplacian at hetero interfaces, and explain how path following methods are applied to simulate S-shaped current-voltage relations resulting from the interplay of self-heating and heat flow.
- ItemDrift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
- ItemUnipolar drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Fuhrmann, Jürgen; Doan, Duy Hai; Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss--Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.