Search Results
Experimental proof of Joule heating-induced switched-back regions in OLEDs
Organic light-emitting diodes (OLEDs) have become a major pixel technology in the display sector, with products spanning the entire range of current panel sizes. The ability to freely scale the active area to large and random surfaces paired with flexible substrates provides additional application scenarios for OLEDs in the general lighting, automotive, and signage sectors. These applications require higher brightness and, thus, current density operation compared to the specifications needed for general displays. As extended transparent electrodes pose a significant ohmic resistance, OLEDs suffering from Joule self-heating exhibit spatial inhomogeneities in electrical potential, current density, and hence luminance. In this article, we provide experimental proof of the theoretical prediction that OLEDs will display regions of decreasing luminance with increasing driving current. With a two-dimensional OLED model, we can conclude that these regions are switched back locally in voltage as well as current due to insufficient lateral thermal coupling. Experimentally, we demonstrate this effect in lab-scale devices and derive that it becomes more severe with increasing pixel size, which implies its significance for large-area, high-brightness use cases of OLEDs. Equally, these non-linear switching effects cannot be ignored with respect to the long-term operation and stability of OLEDs; in particular, they might be important for the understanding of sudden-death scenarios. © 2020, The Author(s).
Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices
We present an electrothermal drift–diffusion model for organic semiconductor devices with Gauss–Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter–Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current–voltage curves with regions of negative differential resistance, which were only recently observed experimentally. © 2020, The Author(s).
Passing from bulk to bulk/surface evolution in the Allen-Cahn equation
In this paper we formulate a boundary layer approximation for an Allen-Cahn-type equation involving a small parameter $eps$. Here, $eps$ is related to the thickness of the boundary layer and we are interested in the limit when $eps$ tends to 0 in order to derive nontrivial boundary conditions. The evolution of the system is written as an energy balance formulation of the L^2-gradient flow with the corresponding Allen-Cahn energy functional. By transforming the boundary layer to a fixed domain we show the convergence of the solutions to a solution of a limit system. This is done by using concepts related to Gamma- and Mosco convergence. By considering different scalings in the boundary layer we obtain different boundary conditions.
Gradient structures and geodesic convexity for reaction-diffusion systems
We consider systems of reaction-diffusion equations as gradient systems with respect to an entropy functional and a dissipation metric given in terms of a so-called Onsager operator, which is a sum of a diffusion part of Wasserstein type and a reaction part. We provide methods for establishing geodesic lambda-convexity of the entropy functional by purely differential methods, thus circumventing arguments from mass transportation. Finally, several examples, including a drift-diffusion system, provide a survey on the applicability of the theory. We consider systems of reaction-diffusion equations as gradient systems with respect to an entropy functional and a dissipation metric given in terms of a so-called Onsager operator, which is a sum of a diffusion part of Wasserstein type and a reaction part. We provide methods for establishing geodesic lambda-convexity of the entropy functional by purely differential methods, thus circumventing arguments from mass transportation. Finally, several examples, including a drift-diffusion system, provide a survey on the applicability of the theory.
A coarse‐grained electrothermal model for organic semiconductor devices
We derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion- based electrothermal models with thermistor-type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.
Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device
In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode-based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write-read-erase-read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady-state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
On the evolutionary Gamma-convergence of gradient systems modeling slow and fast chemical reactions
We investigate the limit passage for a system of ordinary differential equations modeling slow and fast chemical reaction of mass-action type, where the rates of fast reactions tend to infinity. We give an elementary proof of convergence to a reduced dynamical system acting in the slow reaction directions on the manifold of fast reaction equilibria. Then we study the entropic gradient structure of these systems and prove an E-convergence result via Gamma-convergence of the primary and dual dissipation potentials, which shows that this structure carries over to the fast reaction limit. We recover the limit dynamics as a gradient flow of the entropy with respect to a pseudo-metric.
Optimal Entropy-Transport problems and a new Hellinger–Kantorovich distance between positive measures
We develop a full theory for the new class of Optimal Entropy-Transport problems between nonnegative and finite Radon measures in general topological spaces. These problems arise quite naturally by relaxing the marginal constraints typical of Optimal Transport problems: given a pair of finite measures (with possibly different total mass), one looks for minimizers of the sum of a linear transport functional and two convex entropy functionals, which quantify in some way the deviation of the marginals of the transport plan from the assigned measures. As a powerful application of this theory, we study the particular case of Logarithmic Entropy-Transport problems and introduce the new Hellinger–Kantorovich distance between measures in metric spaces. The striking connection between these two seemingly far topics allows for a deep analysis of the geometric properties of the new geodesic distance, which lies somehow between the well-known Hellinger–Kakutani and Kantorovich–Wasserstein distances.
Electrothermal Tristability Causes Sudden Burn-In Phenomena in Organic LEDs
Organic light-emitting diodes (OLEDs) have been established as a mature display pixel technology. While introducing the same technology in a large-area form factor to general lighting and signage applications, some key questions remain unanswered. Under high-brightness conditions, OLED panels were reported to exhibit nonlinear electrothermal behavior causing lateral brightness inhomogeneities and even regions of switched-back luminance. Also, the physical understanding of sudden device failure and burn-ins is still rudimentary. A safe and stable operation of lighting tiles, therefore, requires an in-depth understanding of these physical phenomena. Here, it is shown that the electrothermal treatment of thin-film devices allows grasping the underlying physics. Configurations of OLEDs with different lateral dimensions are studied as a role model and it is reported that devices exceeding a certain panel size develop three stable, self heating-induced operating branches. Switching between them causes the sudden formation of dark spots in devices without any preexisting inhomogeneities. A current-stabilized operation mode is commonly used in the lighting industry, as it ensures degradation-induced voltage adjustments. Here, it is demonstrated that a tristable operation always leads to destructive switching, independent of applying constant currents or voltages. With this new understanding of the effects at high operation brightness, it will be possible to adjust driving schemes accordingly, design more resilient system integrations, and develop additional failure mitigation strategies. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
An evolutionary elastoplastic plate model derived via Gamma-convergence
This paper is devoted to dimension reduction for linearized elastoplasticity in the rate-independent case. The reference configuration of the three-dimensional elastoplastic body has a two-dimensional middle surface and a positive but small thickness. Under suitable scalings we derive a limiting model for the case in which the thickness of the plate tends to 0. This model contains membrane and plate deformations (linear Kirchhoff--Love plate), which are coupled via plastic strains. We establish strong convergence of the solutions in the natural energy space. The analysis uses an abstract Gamma-convergence theory for rate-independent evolutionary systems that is based on the notion of energetic solutions. This concept is formulated via an energy-storage functional and a dissipation functional, such that energetic solutions are defined in terms of a stability condition and an energy balance. The Mosco convergence of the quadratic energy-storage functional follows the arguments of the elastic case. To handle the evolutionary situation the interplay with the dissipation functional is controlled by cancellation properties for Mosco-convergent quadratic energies