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- ItemAuthor Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene([London] : Macmillan Publishers Limited, part of Springer Nature, 2021) Lukose, R.; Lisker, M.; Akhtar, F.; Fraschke, M.; Grabolla, T.; Mai, A.; Lukosius, M.The original version of this Article omitted an affiliation for M. Lisker. The correct affiliations for M. Lisker are listed below: IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany Technical University of Applied Science Wildau, Hochschulring 1, 15745, Wildau, Germany The original Article and accompanying Supplementary Information file have been corrected.
- ItemInfluence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene([London] : Macmillan Publishers Limited, part of Springer Nature, 2021) Lukose, R.; Lisker, M.; Akhtar, F.; Fraschke, M.; Grabolla, T.; Mai, A.; Lukosius, M.One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.
- ItemOn the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon(Pennington, NJ : ECS, 2019) Kissinger, G.; Kot, D.; Costina, I.; Lisker, M.PECVD nitride layers with different layer stress ranging from about 315 MPa to −1735 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of nucleation at 650°C for 4 h or 8 h followed annealing 780°C 3 h + 1000°C 16 h in nitrogen, the profiles of the oxide precipitate density were investigated. The binding states of hydrogen in the layers was investigated by FTIR. There is a clear effect of the layer stress on oxide precipitate nucleation. The higher the compressive layer stress is the higher is a BMD peak below the front surface. If the nitride layer is removed after the nucleation anneal the BMD peak below the front surface becomes lower. It is possible to model the BMD peak below the surface by vacancy in-diffusion from the silicon/nitride interface. With increasing duration of the nucleation anneal the vacancy injection from the silicon/nitride interface decreases and with increasing compressive layer stress it increases. © The Author(s) 2019.
- ItemOn the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon(Pennington, NJ : ECS, 2019) Kissinger, G.; Kot, D.; Lisker, M.; Sattler, A.PECVD oxide layers with different layer stress ranging from about −305.2 MPa to 39.9 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of rapid thermal annealing (RTA) and furnace annealing 780°C 3 h + 1000°C 16 h in nitrogen the profiles of the oxide precipitate density were investigated. Supersaturations of self-interstitials as function of layer stress were determined by adjusting modelling results to measured depth profiles of bulk microdefects. The self-interstitial supersaturation generated by RTA at 1250°C and 1175°C at the silicon/oxide interface is increasing linearly with increasing layer stress. Values for self-interstitial supersaturation determined on deposited oxide layers after RTA at 1250°C and 1175°C are very similar to values published for RTO by Sudo et al. An RTA at 1175°C with a PECVD oxide on top of the wafer is a method to effectively suppress oxygen precipitation in silicon wafers. Nucleation anneals carried out at 650°C for 4 h and 8 h did not show any effect of PECVD oxide layers on oxide precipitate nucleation. © The Author(s) 2019.
- ItemReliable metal-graphene contact formation process flows in a CMOS-compatible environment(Cambridge : Royal Society of Chemistry, 2022) Elviretti, M.; Lisker, M.; Lukose, R.; Lukosius, M.; Akhtar, F.; Mai, A.The possibility of exploiting the enormous potential of graphene for microelectronics and photonics must go through the optimization of the graphene-metal contact. Achieving low contact resistance is essential for the consideration of graphene as a candidate material for electronic and photonic devices. This work has been carried out in an 8′′ wafer pilot-line for the integration of graphene into a CMOS environment. The main focus is to study the impact of the patterning of graphene and passivation on metal-graphene contact resistance. The latter is measured by means of transmission line measurement (TLM) with several contact designs. The presented approaches enable reproducible formation of contact resistivity as low as 660 Ω μm with a sheet resistance of 1.8 kΩ/□ by proper graphene patterning, passivation of the channel and a post-processing treatment such as annealing.